Cascaded GaN Light-Emitting Diodes With Hybrid Tunnel Junction Layers

Shoou Jinn Chang, Wei Heng Lin, Wei Shou Chen

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

We report the fabrication of cascaded GaN light-emitting diodes (LEDs) with previously reported p++-GaN/i-InGaN/n++-GaN tunnel junction layers (TJLs) and with hybrid TJL. Compared with the conventional LED, it was found that we could enhance the output power by 35% and 80% from the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL. It was also found that the TJ resistances were 6.05 × 10-3 and 1.95 × 10-3Ω · cm2 for the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL, respectively. It was also found that the use of hybrid TJL could result in smaller efficiency droop. These improvements could all be attributed to the larger polarization charges induced at the AlGaN/InGaN interface which could enhance the tunneling current. Furthermore, it was found that the cascaded GaN LEDs with hybrid TJL were also reliable.

原文English
文章編號7123568
期刊IEEE Journal of Quantum Electronics
51
發行號8
DOIs
出版狀態Published - 2015 8月 1

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 凝聚態物理學
  • 電氣與電子工程

指紋

深入研究「Cascaded GaN Light-Emitting Diodes With Hybrid Tunnel Junction Layers」主題。共同形成了獨特的指紋。

引用此