摘要
Highly oriented ZnO nanorods have been grown on various substrates, such as fused silica, Si(100), and sapphire (110), using a simple catalyst-free CVD method at low temperatures. TEM analyses indicate that epitaxial ZnO nanorods have been grown on sapphire (110) with the ZnO/sapphire orientational relationship [001]∥[110] and [110]∥[001]. In the Si(100) substrate, an amorphous SiOx interfacial layer exists between ZnO nanorods and Si(100). The well-aligned ZnO nanorods on fused silica substrates exhibit a strong UV emission and absorption at around 386 nm under room temperature. Photoluminescence and Raman spectra indicate that there is a very low concentration of oxygen vacancies in the highly oriented ZnO nanorods. Diameter control of the well-oriented and high-quality ZnO nanorods is achievable by variation of the growth conditions.
原文 | English |
---|---|
頁(從 - 到) | 9546-9551 |
頁數 | 6 |
期刊 | Journal of Physical Chemistry B |
卷 | 106 |
發行號 | 37 |
DOIs | |
出版狀態 | Published - 2002 9月 19 |
All Science Journal Classification (ASJC) codes
- 物理與理論化學
- 表面、塗料和薄膜
- 材料化學