Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures

L. L. Chao, M. B. Freiler, M. Levy, J. L. Lin, G. S. Cargill, R. M. Osgood, G. F. McLane

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We describe studies of luminescence and lateral transport properties of excited careers in GaAs-AlGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from approximately 8 K to 250 K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

原文English
頁(從 - 到)429-434
頁數6
期刊Materials Research Society Symposium - Proceedings
405
出版狀態Published - 1996 一月 1
事件Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
持續時間: 1995 十一月 261995 十二月 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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