Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors

Ching Ting Lee, Chih Chien Lin, Hsin Ying Lee, Po Sung Chen

研究成果: Article同行評審

36 引文 斯高帕斯(Scopus)

摘要

A chlorination surface treatment was used to reduce the surface density of states of a n -type GaN surface, which improves the Schottky performances of the resultant metal-semiconductor contact. Using capacitance-frequency measurement, the surface state density of the chlorine-treated GaN surface was about one order less than that without chlorination treatment. The dark current of the chlorine-treated GaN ultraviolet photodetectors (UV-PDs) is 1.5 orders of magnitude lower than that of those without chlorination treatment. The products of quantum efficiency and internal gain of the GaN Schottky UV-PDs without and with chlorination treatment under conditions of -10 V reverse bias voltage at a wavelength of 330 nm were 650% and 100%, respectively. The internal gain in chlorine-treated GaN UV-PDs can therefore be reduced due to a decrease in the surface state density.

原文English
文章編號094504
期刊Journal of Applied Physics
103
發行號9
DOIs
出版狀態Published - 2008

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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