Channel length dependence of hot-carrier-induced degradation in n-type drain extended metal-oxide-semiconductor transistors

Jone F. Chen, Shiang Yu Chen, Kuo Ming Wu, C. M. Liu

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

Channel length (Lch) dependence of hot-carrier-induced degradation in n-type drain extended metal-oxide-semiconductor (DEMOS) transistors stressed under high drain voltage and high gate voltage is investigated. On-resistance degradation is reduced in longer Lch device, however, threshold voltage shift (ΔVT) is greater. Charge pumping data reveal that electron trapping in gate oxide above channel region is responsible for ΔVT. Simulation results show that longer Lch device exhibits enhanced vertical electric field (E y), i.e., enhanced hot-electron injection, in channel region due to the alleviation of Kirk effect. Results presented in this letter reveal that enhanced ΔVT driven by enhanced channel Ey may become a serious reliability concern in DEMOS transistors with longer L ch.

原文English
文章編號223504
期刊Applied Physics Letters
93
發行號22
DOIs
出版狀態Published - 2008

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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