@inproceedings{8832f99e75e048b8832206734924d1d6,
title = "Channel mobility of GeSi quantum-well P-MOSFETs",
abstract = "The results of channel mobility of a GeSi quantum-well PMOS from 8 K to 300 K are presented. As the temperature is lowered below 25 K, the field effect channel mobility sharply increases with lowering of the temperature. The mobility at 8 K is found to be 3 times higher than that at 25 K. At very low temperature (∼ 10 K), the transition of channel transconductance with gate voltage from a high (GeSi channel) to a low (surface channel) value has been clearly observed.",
author = "Nayak, {D. K.} and Woo, {J. C.S.} and Park, {J. S.} and Wang, {K. L.} and Macwilliams, {K. P.}",
note = "Publisher Copyright: {\textcopyright} 1991 IEEE. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.; 1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 ; Conference date: 22-05-1991 Through 24-05-1991",
year = "1991",
doi = "10.1109/VTSA.1991.246744",
language = "English",
series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "301--303",
booktitle = "1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991",
address = "United States",
}