@inproceedings{d89fdabf2ae34f9bb513b228bc3e8c59,
title = "Channel width dependence of hot-carrier induced degradation in shallow trench isolated pMOSFETs",
abstract = "Channel width dependence of hotcarrier induced degradation in pMOSFETs with shallow trench isolation structure is investigated. Enhanced degradation is observed in narrow channel width device due to the increase in the electron trapping efficiency of the gate oxide film. Mechanical stress may be responsible for this phenomenon.",
author = "Kazunari Ishimaru and Chen, {Jone F.} and Chenming Hu",
year = "1998",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "240--243",
editor = "A. Touboul and Y. Danto and H. Grunbacher",
booktitle = "ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference",
address = "United States",
note = "28th European Solid-State Device Research Conference, ESSDERC 1998 ; Conference date: 08-09-1998 Through 10-09-1998",
}