Characteristics and improvement in hot-carrier reliability of sub-micrometer High-voltage double diffused drain metal-oxide-semiconductor field-effect transistors

Jone-Fang Chen, Kuo Ming Wu, J. R. Lee, Yan Kuin Su, H. C. Wang, Yu-Cheng Lin, S. L. Hsu

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The hot-carrier reliability of 1.2 V high-voltage n-channel double diffused drain metal-oxide-semiconductor (DDDMOS) field-effect transistors with various n-type double diffusion (NDD) implant dosages is investigated. A high NDD implant dosage results in a high substrate current; however, on-resistance (Ron) degradation is low. The damage location shifting toward the channel is responsible for this unexpected low Ron degradation. Technology computer-aided design (TCAD) simulation and charge pumping measurements are carried out to identify the damage location. Our analysis results reveal that an increase in NDD dosage is effective for improving the reliability of the DDDMOS field-effect transistors.

原文English
頁(從 - 到)2019-2022
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
發行號4 B
DOIs
出版狀態Published - 2007 四月 24

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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