Characteristics enhancement of a GaAs based heterostructure field-effect transistor with an electrophoretic deposition (EPD) surface treated gate structure

Chun Chia Chen, Huey Ing Chen, I. Ping Liu, Po Cheng Chou, Jian Kai Liou, Yu Ting Tsai, Wen Chau Liu

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A Pt/AlGaAs/InGaAs/GaAs heterostructure field-effect transistor (HFET), prepared by an electrophoretic deposition (EPD) approach on gate Schottky contact region, is fabricated and studied. The EPD-based Pt-gates with three different molar ratios (ω 0 ) are examined by scanning electron microscopy (SEM) image. Good Pt-gate coverage with effective reduction of thermal-induced defects at Pt/AlGaAs interface is achieved through a low temperature EPD approach. Experimentally, for a gate dimension of 1 μm × 100 μm, a lower gate current of 1.9 × 10 -2 mA/mm, a higher turn-on voltage of 0.85 V, a higher maximum drain saturation current of 319.3 mA/mm, and a higher maximum extrinsic transconductance of 146.8 mS/mm are obtained for an EPD-based HFET at 300 K. Moreover, comparable microwave characteristics of an EPD-based HFET are demonstrated at different temperature ambiences. Therefore, based on the improved DC performance and inherent benefits of low cost, simple apparatus, flexible deposition on varied substrates, and adjustable alloy grain size, the proposed EPD approach shows the promise to fabricate high-performance electronic devices.

原文English
頁(從 - 到)120-126
頁數7
期刊Applied Surface Science
341
DOIs
出版狀態Published - 2015 六月 30

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

指紋 深入研究「Characteristics enhancement of a GaAs based heterostructure field-effect transistor with an electrophoretic deposition (EPD) surface treated gate structure」主題。共同形成了獨特的指紋。

引用此