TY - JOUR
T1 - Characteristics of δ-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel
AU - Huang, Jun Chin
AU - Hsu, Wei Chou
AU - Lee, Ching Sung
AU - Huang, Dong Hai
AU - Huang, Ming Feng
PY - 2006/5/1
Y1 - 2006/5/1
N2 - Various static and microwave performances on InAlAs/InGaAs/InP HEMTs with a linearly-graded InxGa1-xAs channel (LGC-HEMT) have been comprehensively investigated and compared to those having a conventional lattice-matched In0.53Ga0.47As channel (LM-HEMT). Improved carrier transport characteristics and confinement capability by employing the linearly-graded channel have contributed to superior extrinsic transconductance (gm) of 346 mS mm-1, gate-voltage swing (GVS) of 0.5 V (182 mA), unity-gain cut-off frequency (ft) of 41 GHz and maximum oscillation frequency (fmax) of 63 GHz, with an improved frequency operation plateau at 300 K for a gate dimension of 0.65 × 200 νm2. Furthermore, improved kink effects leading to a lower gate leakage current of 0.7 νA mm-1, lower output conductance (g d) of 3.6 mS mm-1, higher voltage gain (AV) of 93.1, higher off-state breakdown voltage of 16.3 V and superior output power characteristics have also been discussed.
AB - Various static and microwave performances on InAlAs/InGaAs/InP HEMTs with a linearly-graded InxGa1-xAs channel (LGC-HEMT) have been comprehensively investigated and compared to those having a conventional lattice-matched In0.53Ga0.47As channel (LM-HEMT). Improved carrier transport characteristics and confinement capability by employing the linearly-graded channel have contributed to superior extrinsic transconductance (gm) of 346 mS mm-1, gate-voltage swing (GVS) of 0.5 V (182 mA), unity-gain cut-off frequency (ft) of 41 GHz and maximum oscillation frequency (fmax) of 63 GHz, with an improved frequency operation plateau at 300 K for a gate dimension of 0.65 × 200 νm2. Furthermore, improved kink effects leading to a lower gate leakage current of 0.7 νA mm-1, lower output conductance (g d) of 3.6 mS mm-1, higher voltage gain (AV) of 93.1, higher off-state breakdown voltage of 16.3 V and superior output power characteristics have also been discussed.
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U2 - 10.1088/0268-1242/21/5/009
DO - 10.1088/0268-1242/21/5/009
M3 - Article
AN - SCOPUS:33645658566
SN - 0268-1242
VL - 21
SP - 619
EP - 625
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 5
ER -