Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor

R. T. Hsu; W. C. Hsu; M. J. Kao; J. S. Wang

doi:10.1063/1.113455

Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor

R. T. Hsu, W. C. Hsu, M. J. Kao, J. S. Wang

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

A δ-doped GaAs/In_0.2Ga_0.8As p-channel heterostructure field-effect transistor grown by low-pressure metalorganic chemical vapor deposition is demonstrated. The mobilities and two-dimensional hole gas concentrations at 300 (77) K are 260 (2600) cm²/v s and 2×10¹²(5.5×10¹¹)cm^-2, respectively. For a gate length of 1.5 μm, the maximum extrinsic transconductances are 15 mS/mm at 300 K and 24 mS/mm at 77 K. The high transconductances extend a wide range versus gate voltage.

原文	English
頁數	1
期刊	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113455
出版狀態	Published - 1995

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.113455

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abstract = "A δ-doped GaAs/In0.2Ga0.8As p-channel heterostructure field-effect transistor grown by low-pressure metalorganic chemical vapor deposition is demonstrated. The mobilities and two-dimensional hole gas concentrations at 300 (77) K are 260 (2600) cm2/v s and 2×1012(5.5×1011)cm-2, respectively. For a gate length of 1.5 μm, the maximum extrinsic transconductances are 15 mS/mm at 300 K and 24 mS/mm at 77 K. The high transconductances extend a wide range versus gate voltage.",

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year = "1995",

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language = "English",

journal = "Applied Physics Letters",

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T1 - Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor

AU - Hsu, R. T.

AU - Hsu, W. C.

AU - Kao, M. J.

AU - Wang, J. S.

PY - 1995

Y1 - 1995

N2 - A δ-doped GaAs/In0.2Ga0.8As p-channel heterostructure field-effect transistor grown by low-pressure metalorganic chemical vapor deposition is demonstrated. The mobilities and two-dimensional hole gas concentrations at 300 (77) K are 260 (2600) cm2/v s and 2×1012(5.5×1011)cm-2, respectively. For a gate length of 1.5 μm, the maximum extrinsic transconductances are 15 mS/mm at 300 K and 24 mS/mm at 77 K. The high transconductances extend a wide range versus gate voltage.

AB - A δ-doped GaAs/In0.2Ga0.8As p-channel heterostructure field-effect transistor grown by low-pressure metalorganic chemical vapor deposition is demonstrated. The mobilities and two-dimensional hole gas concentrations at 300 (77) K are 260 (2600) cm2/v s and 2×1012(5.5×1011)cm-2, respectively. For a gate length of 1.5 μm, the maximum extrinsic transconductances are 15 mS/mm at 300 K and 24 mS/mm at 77 K. The high transconductances extend a wide range versus gate voltage.

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JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor

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