Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch

Der Feng Guo, Lih Wen Laih, Jung Hui Tsai, Wen Chau Liu, Wei Chou Hsu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A switching device, with a p-type delta-doped sheet in the center of an InGaAs-GaAs quantum well, has been fabricated and demonstrated. An N-shaped negative-differential-resistance phenomenon resulting from the resonant-tunneling effect through the miniband is observed in the current-voltage measurement. From the experimental results, it is seen that the temperature plays an important role in device operation. The influences of temperature upon the peak-current voltage, valley-current voltage, peak-current density, and valley-current density are studied and discussed.

原文English
頁(從 - 到)2782-2785
頁數4
期刊Journal of Applied Physics
77
發行號6
DOIs
出版狀態Published - 1995 十二月 1

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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