Characteristics of a GaN-based light-emitting diode with an inserted p-GaN/i-InGaN superlattice structure

Yi Jung Liu, Tsung Yuan Tsai, Chih Hung Yen, Li Yang Chen, Tsung Han Tsai, Wen Chau Liu

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

An interesting GaN-based light-emitting diode (LED) with a ten-period i (undoped)-InGaN/p (Mg doped)-GaN (2.5 nm/5 nm) superlattice (SL) structure, inserted between a multiple-quantum well (MQW) structure and a p-GaN layer, is fabricated and studied. This inserted SL can be regarded as a confinement layer of holes to enhance the hole injection efficiency. As compared with a conventional LED device without the SL structure, the studied LED exhibits better current spreading performance and an improved quality. The turn-on voltage, at 20 mA, is decreased from 3.32 to 3.14 V due to the reduced contact resistance as well as the more uniformity of carriers injection. A substantially reduced leakage current (10-7 to 10-9 A) and higher endurance of the reverse current pulse are found. The measured output power and external quantum efficiency (EQE) of the studied LED are 13.6 mW and 24.8%. In addition, as compared with the conventional LED without the SL structure, the significant enhancement of 25.4% in output power as well as the increment of 5% in EQE are observed due to the superior current spreading ability and reduction of dislocations offered by the SL structure.

原文English
文章編號5412124
頁(從 - 到)492-498
頁數7
期刊IEEE Journal of Quantum Electronics
46
發行號4
DOIs
出版狀態Published - 2010 三月 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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