Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode

Kun Wei Lin, Huey Ing Chen, Chin Chuan Cheng, Hung Ming Chuang, Chun Tsen Lu, Wen Chau Liu

研究成果: Article同行評審

28 引文 斯高帕斯(Scopus)

摘要

A new Pt/oxide/InGaP metal-oxide semiconductor (MOS) Schottky diode has been fabricated and studied. Upon exposure to hydrogen, the steady-state and transient responses under different hydrogen concentrations and temperatures are measured. Due to the inherent property of InGaP material, e.g. the wide energy gap, a wide hydrogen-sensing range as large as 300 K (from room temperature to 600 K) is obtained. Even at room temperature, a very high sensitivity over 500% for 9090 ppm hydrogen in air is acquired. Furthermore, the measured absorption response time is less than 1 s at the applied voltage of 0.7 V and 9090 ppm hydrogen concentration atmosphere condition. Simultaneously, based on the analysis of the variation of barrier height and hydrogen coverage, the characteristics of the studied Pt/oxide/InGaP MOS Schottky diode is in good agreement with the Lundström isotherm.

原文English
頁(從 - 到)145-151
頁數7
期刊Sensors and Actuators, B: Chemical
94
發行號2
DOIs
出版狀態Published - 2003 九月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 儀器
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 金屬和合金
  • 電氣與電子工程
  • 材料化學

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