TY - JOUR
T1 - Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode
AU - Lin, Kun Wei
AU - Chen, Huey Ing
AU - Cheng, Chin Chuan
AU - Chuang, Hung Ming
AU - Lu, Chun Tsen
AU - Liu, Wen Chau
N1 - Funding Information:
Part of this work was supported by the National Science Council of the Republic of China under contact No. NSC 91-2215-E-006-016.
PY - 2003/9/1
Y1 - 2003/9/1
N2 - A new Pt/oxide/InGaP metal-oxide semiconductor (MOS) Schottky diode has been fabricated and studied. Upon exposure to hydrogen, the steady-state and transient responses under different hydrogen concentrations and temperatures are measured. Due to the inherent property of InGaP material, e.g. the wide energy gap, a wide hydrogen-sensing range as large as 300 K (from room temperature to 600 K) is obtained. Even at room temperature, a very high sensitivity over 500% for 9090 ppm hydrogen in air is acquired. Furthermore, the measured absorption response time is less than 1 s at the applied voltage of 0.7 V and 9090 ppm hydrogen concentration atmosphere condition. Simultaneously, based on the analysis of the variation of barrier height and hydrogen coverage, the characteristics of the studied Pt/oxide/InGaP MOS Schottky diode is in good agreement with the Lundström isotherm.
AB - A new Pt/oxide/InGaP metal-oxide semiconductor (MOS) Schottky diode has been fabricated and studied. Upon exposure to hydrogen, the steady-state and transient responses under different hydrogen concentrations and temperatures are measured. Due to the inherent property of InGaP material, e.g. the wide energy gap, a wide hydrogen-sensing range as large as 300 K (from room temperature to 600 K) is obtained. Even at room temperature, a very high sensitivity over 500% for 9090 ppm hydrogen in air is acquired. Furthermore, the measured absorption response time is less than 1 s at the applied voltage of 0.7 V and 9090 ppm hydrogen concentration atmosphere condition. Simultaneously, based on the analysis of the variation of barrier height and hydrogen coverage, the characteristics of the studied Pt/oxide/InGaP MOS Schottky diode is in good agreement with the Lundström isotherm.
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U2 - 10.1016/S0925-4005(03)00347-2
DO - 10.1016/S0925-4005(03)00347-2
M3 - Article
AN - SCOPUS:0041696517
SN - 0925-4005
VL - 94
SP - 145
EP - 151
JO - Sensors and Actuators, B: Chemical
JF - Sensors and Actuators, B: Chemical
IS - 2
ER -