Characteristics of a sulfur-passivated InGaPInGaAsGaAs heterostructure field-effect transistor

The effect of (NH4) 2 Sx treatment on the device characteristics of an InGaPInGaAsGaAs heterostructure field-effect transistor are studied and demonstrated. Experimentally, it is found that the sulfur-passivated device shows significant dc characteristics including higher forward voltage, lower leakage current, lower output conductance, and higher voltage gain. The superior microwave performances with flat and wide operating region of drain saturation current are simultaneously obtained. Furthermore, the improved thermal stabilities over wide temperature range of sulfur-passivated devices are attained. Based on these advantages, the studied device with (NH4) 2 Sx treatment shows the promise for high-temperature and high-performance microwave applications.