TY - JOUR
T1 - Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor
AU - Yu, Kuo Hui
AU - Chang, Wen Lung
AU - Feng, Shun Ching
AU - Liu, Wen Chau
N1 - Funding Information:
Part of this work was supported by the National Science Council of the Republic of China under contract no. NSC 88-2215-E-006-010.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2000/11/1
Y1 - 2000/11/1
N2 - The characteristics of GaAs/InGaP/GaAs camel-gate field-effect transistor (CAMFET) with various channel structures including the single-, double-, and triple-step doped channel are studied. A theoretical model is used to analyze the device performances with different structures. Experimentally, a triple-step doped channel GaAs/InGaP/GaAs CAMFET has been fabricated successfully and demonstrated. From the theoretical analysis and experimental results, the gate turn-on and breakdown voltages could be enhanced by using the large band gap InGaP layer and triple-step doped channel structure. Furthermore, the good transistor characteristics are observed. Hence the studied device shows a good potential for the practice circuit applications.
AB - The characteristics of GaAs/InGaP/GaAs camel-gate field-effect transistor (CAMFET) with various channel structures including the single-, double-, and triple-step doped channel are studied. A theoretical model is used to analyze the device performances with different structures. Experimentally, a triple-step doped channel GaAs/InGaP/GaAs CAMFET has been fabricated successfully and demonstrated. From the theoretical analysis and experimental results, the gate turn-on and breakdown voltages could be enhanced by using the large band gap InGaP layer and triple-step doped channel structure. Furthermore, the good transistor characteristics are observed. Hence the studied device shows a good potential for the practice circuit applications.
UR - http://www.scopus.com/inward/record.url?scp=0034320737&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034320737&partnerID=8YFLogxK
U2 - 10.1016/S0038-1101(00)00172-6
DO - 10.1016/S0038-1101(00)00172-6
M3 - Article
AN - SCOPUS:0034320737
SN - 0038-1101
VL - 44
SP - 2069
EP - 2075
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 11
ER -