TY - JOUR
T1 - Characteristics of GaN-Based LEDs with Hybrid Microhole Arrays and SiO2 Microspheres/Nanoparticles Structures
AU - Liou, Jian Kai
AU - Chan, Yi Chun
AU - Chen, Wei Cheng
AU - Chang, Ching Hong
AU - Chen, Chun Yen
AU - Tsai, Jung Hui
AU - Liu, Wen Chau
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2017/7
Y1 - 2017/7
N2 - The Characteristics of GaN-based LEDs with hybrid microhole arrays and SiO2 microspheres (MSs)/ nanoparticles (NPs) are comprehensively studied. The SiO2 MSs/NPs antireflection coating, deposited by a rapid convection deposition, acts as a passivation layer of GaN-based LEDs. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of SiO2 MSs/NPs antireflection coating, the scattering effect could also be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED with a planar aluminum-doped zinc oxide current spreading layer (Device A), the studied device with the proposed hybrid structure and a sputtered SiO2 passivation layer (Device E) causes a suppressed leakage current and % enhancements on light output power, external quantum efficiency, and wall-plug efficiency performance.
AB - The Characteristics of GaN-based LEDs with hybrid microhole arrays and SiO2 microspheres (MSs)/ nanoparticles (NPs) are comprehensively studied. The SiO2 MSs/NPs antireflection coating, deposited by a rapid convection deposition, acts as a passivation layer of GaN-based LEDs. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of SiO2 MSs/NPs antireflection coating, the scattering effect could also be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED with a planar aluminum-doped zinc oxide current spreading layer (Device A), the studied device with the proposed hybrid structure and a sputtered SiO2 passivation layer (Device E) causes a suppressed leakage current and % enhancements on light output power, external quantum efficiency, and wall-plug efficiency performance.
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U2 - 10.1109/TED.2017.2702651
DO - 10.1109/TED.2017.2702651
M3 - Article
AN - SCOPUS:85019927780
SN - 0018-9383
VL - 64
SP - 2854
EP - 2858
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 7
M1 - 7932114
ER -