Characteristics of GaN/InGaN double-heterostructure photovoltaic cells

Ming Hsien Wu, Sheng Po Chang, Shoou Jinn Chang, Ray Hua Horng, Wen Yih Liao, Ray Ming Lin

研究成果: Article

4 引文 (Scopus)

摘要

The p-GaN/i-In x Ga 1-x N/n-GaN double-heterostructure photovoltaic (PV) cells have been fabricated and the theoretical photovoltaic properties were also calculated in this work. From theoretical simulation, higher efficiency can be obtained in GaN/InGaN double-heterostructure photovoltaic cells with higher In composition in i-InGaN intrinsic layer. GaN/InGaN double-heterostructure photovoltaic cells with In compositions of 10, 12, and 14 were fabricated and characterized for demonstrating with the simulated results. The corresponding photoelectrical conversion efficiency of fabricated GaN/InGaN photovoltaic cells with In compositions of 10, 12, and 14 is 0.51, 0.53, and 0.32 under standard AM 1.5G measurement condition, respectively. GaN/InGaN photovoltaic cells with In composition of 10 showed high open-circuit voltage (V oc) of 2.07 V and fill factor (F.F.) of 80.67. The decrease of V oc and FF was observed as In composition increasing from 10 to 14. For comparing with the fabricated GaN/InGaN photovoltaic cells, theoretical conversion efficiency of GaN/InGaN photovoltaic cells with In compositions of 10, 12, and 14, is 1.80, 2.04, and 2.27, respectively. The difference of GaN/InGaN photovoltaic properties between theoretical simulation and experimental measurement could be attributed to the inferior quality of InGaN epilayer and GaN/InGaN interface generated as the increase of In composition.

原文English
文章編號206174
期刊International Journal of Photoenergy
2012
DOIs
出版狀態Published - 2012 九月 17

指紋

Photovoltaic cells
photovoltaic cells
Heterojunctions
Chemical analysis
Conversion efficiency
Epilayers
Open circuit voltage
open circuit voltage
high voltages
simulation

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

引用此文

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title = "Characteristics of GaN/InGaN double-heterostructure photovoltaic cells",
abstract = "The p-GaN/i-In x Ga 1-x N/n-GaN double-heterostructure photovoltaic (PV) cells have been fabricated and the theoretical photovoltaic properties were also calculated in this work. From theoretical simulation, higher efficiency can be obtained in GaN/InGaN double-heterostructure photovoltaic cells with higher In composition in i-InGaN intrinsic layer. GaN/InGaN double-heterostructure photovoltaic cells with In compositions of 10, 12, and 14 were fabricated and characterized for demonstrating with the simulated results. The corresponding photoelectrical conversion efficiency of fabricated GaN/InGaN photovoltaic cells with In compositions of 10, 12, and 14 is 0.51, 0.53, and 0.32 under standard AM 1.5G measurement condition, respectively. GaN/InGaN photovoltaic cells with In composition of 10 showed high open-circuit voltage (V oc) of 2.07 V and fill factor (F.F.) of 80.67. The decrease of V oc and FF was observed as In composition increasing from 10 to 14. For comparing with the fabricated GaN/InGaN photovoltaic cells, theoretical conversion efficiency of GaN/InGaN photovoltaic cells with In compositions of 10, 12, and 14, is 1.80, 2.04, and 2.27, respectively. The difference of GaN/InGaN photovoltaic properties between theoretical simulation and experimental measurement could be attributed to the inferior quality of InGaN epilayer and GaN/InGaN interface generated as the increase of In composition.",
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Characteristics of GaN/InGaN double-heterostructure photovoltaic cells. / Wu, Ming Hsien; Chang, Sheng Po; Chang, Shoou Jinn; Horng, Ray Hua; Liao, Wen Yih; Lin, Ray Ming.

於: International Journal of Photoenergy, 卷 2012, 206174, 17.09.2012.

研究成果: Article

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T1 - Characteristics of GaN/InGaN double-heterostructure photovoltaic cells

AU - Wu, Ming Hsien

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Horng, Ray Hua

AU - Liao, Wen Yih

AU - Lin, Ray Ming

PY - 2012/9/17

Y1 - 2012/9/17

N2 - The p-GaN/i-In x Ga 1-x N/n-GaN double-heterostructure photovoltaic (PV) cells have been fabricated and the theoretical photovoltaic properties were also calculated in this work. From theoretical simulation, higher efficiency can be obtained in GaN/InGaN double-heterostructure photovoltaic cells with higher In composition in i-InGaN intrinsic layer. GaN/InGaN double-heterostructure photovoltaic cells with In compositions of 10, 12, and 14 were fabricated and characterized for demonstrating with the simulated results. The corresponding photoelectrical conversion efficiency of fabricated GaN/InGaN photovoltaic cells with In compositions of 10, 12, and 14 is 0.51, 0.53, and 0.32 under standard AM 1.5G measurement condition, respectively. GaN/InGaN photovoltaic cells with In composition of 10 showed high open-circuit voltage (V oc) of 2.07 V and fill factor (F.F.) of 80.67. The decrease of V oc and FF was observed as In composition increasing from 10 to 14. For comparing with the fabricated GaN/InGaN photovoltaic cells, theoretical conversion efficiency of GaN/InGaN photovoltaic cells with In compositions of 10, 12, and 14, is 1.80, 2.04, and 2.27, respectively. The difference of GaN/InGaN photovoltaic properties between theoretical simulation and experimental measurement could be attributed to the inferior quality of InGaN epilayer and GaN/InGaN interface generated as the increase of In composition.

AB - The p-GaN/i-In x Ga 1-x N/n-GaN double-heterostructure photovoltaic (PV) cells have been fabricated and the theoretical photovoltaic properties were also calculated in this work. From theoretical simulation, higher efficiency can be obtained in GaN/InGaN double-heterostructure photovoltaic cells with higher In composition in i-InGaN intrinsic layer. GaN/InGaN double-heterostructure photovoltaic cells with In compositions of 10, 12, and 14 were fabricated and characterized for demonstrating with the simulated results. The corresponding photoelectrical conversion efficiency of fabricated GaN/InGaN photovoltaic cells with In compositions of 10, 12, and 14 is 0.51, 0.53, and 0.32 under standard AM 1.5G measurement condition, respectively. GaN/InGaN photovoltaic cells with In composition of 10 showed high open-circuit voltage (V oc) of 2.07 V and fill factor (F.F.) of 80.67. The decrease of V oc and FF was observed as In composition increasing from 10 to 14. For comparing with the fabricated GaN/InGaN photovoltaic cells, theoretical conversion efficiency of GaN/InGaN photovoltaic cells with In compositions of 10, 12, and 14, is 1.80, 2.04, and 2.27, respectively. The difference of GaN/InGaN photovoltaic properties between theoretical simulation and experimental measurement could be attributed to the inferior quality of InGaN epilayer and GaN/InGaN interface generated as the increase of In composition.

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