Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights

Sheng Fu Yu, Sheng Po Chang, Shoou Jinn Chang, Ray Ming Lin, Hsin Hung Wu, Wen Ching Hsu

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%)μm at an injected current of 20mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

原文English
文章編號346915
期刊Journal of Nanomaterials
2012
DOIs
出版狀態Published - 2012

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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