Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights

Sheng Fu Yu; Sheng Po Chang; Shoou Jinn Chang; Ray Ming Lin; Hsin Hung Wu; Wen Ching Hsu

doi:10.1155/2012/346915

Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights

Sheng Fu Yu, Sheng Po Chang, Shoou Jinn Chang, Ray Ming Lin, Hsin Hung Wu, Wen Ching Hsu

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%)μm at an injected current of 20mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

原文	English
文章編號	346915
期刊	Journal of Nanomaterials
卷	2012
DOIs	https://doi.org/10.1155/2012/346915
出版狀態	Published - 2012

All Science Journal Classification (ASJC) codes

一般材料科學

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10.1155/2012/346915

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@article{4ef10bc995f7430b90143ae04969d226,

title = "Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights",

abstract = "The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%)μm at an injected current of 20mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.",

author = "Yu, {Sheng Fu} and Chang, {Sheng Po} and Chang, {Shoou Jinn} and Lin, {Ray Ming} and Wu, {Hsin Hung} and Hsu, {Wen Ching}",

year = "2012",

doi = "10.1155/2012/346915",

language = "English",

volume = "2012",

journal = "Journal of Nanomaterials",

issn = "1687-4110",

publisher = "Hindawi Publishing Corporation",

}

TY - JOUR

T1 - Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights

AU - Yu, Sheng Fu

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Lin, Ray Ming

AU - Wu, Hsin Hung

AU - Hsu, Wen Ching

PY - 2012

Y1 - 2012

N2 - The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%)μm at an injected current of 20mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

AB - The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%)μm at an injected current of 20mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

UR - http://www.scopus.com/inward/record.url?scp=84864934715&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864934715&partnerID=8YFLogxK

U2 - 10.1155/2012/346915

DO - 10.1155/2012/346915

M3 - Article

AN - SCOPUS:84864934715

SN - 1687-4110

VL - 2012

JO - Journal of Nanomaterials

JF - Journal of Nanomaterials

M1 - 346915

ER -

Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights

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