Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights

Sheng Fu Yu, Sheng Po Chang, Shoou Jinn Chang, Ray Ming Lin, Hsin Hung Wu, Wen Ching Hsu

研究成果: Article

8 引文 (Scopus)

摘要

The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%)μm at an injected current of 20mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

原文English
文章編號346915
期刊Journal of Nanomaterials
2012
DOIs
出版狀態Published - 2012 八月 17

指紋

Aluminum Oxide
Sapphire
Light emitting diodes
Substrates
Organic Chemicals
Organic chemicals
Electroluminescence
Leakage currents
Atmospheric pressure
Chemical vapor deposition
Metals
Defects
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

引用此文

@article{4ef10bc995f7430b90143ae04969d226,
title = "Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights",
abstract = "The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21{\%}), 1.1 (57{\%}), 1.5 (81{\%}), and 1.9 (91{\%})μm at an injected current of 20mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.",
author = "Yu, {Sheng Fu} and Chang, {Sheng Po} and Chang, {Shoou Jinn} and Lin, {Ray Ming} and Wu, {Hsin Hung} and Hsu, {Wen Ching}",
year = "2012",
month = "8",
day = "17",
doi = "10.1155/2012/346915",
language = "English",
volume = "2012",
journal = "Journal of Nanomaterials",
issn = "1687-4110",
publisher = "Hindawi Publishing Corporation",

}

Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights. / Yu, Sheng Fu; Chang, Sheng Po; Chang, Shoou Jinn; Lin, Ray Ming; Wu, Hsin Hung; Hsu, Wen Ching.

於: Journal of Nanomaterials, 卷 2012, 346915, 17.08.2012.

研究成果: Article

TY - JOUR

T1 - Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights

AU - Yu, Sheng Fu

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Lin, Ray Ming

AU - Wu, Hsin Hung

AU - Hsu, Wen Ching

PY - 2012/8/17

Y1 - 2012/8/17

N2 - The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%)μm at an injected current of 20mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

AB - The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%)μm at an injected current of 20mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

UR - http://www.scopus.com/inward/record.url?scp=84864934715&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864934715&partnerID=8YFLogxK

U2 - 10.1155/2012/346915

DO - 10.1155/2012/346915

M3 - Article

AN - SCOPUS:84864934715

VL - 2012

JO - Journal of Nanomaterials

JF - Journal of Nanomaterials

SN - 1687-4110

M1 - 346915

ER -