Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers

Chih Ciao Yang, Jinn-Kong Sheu, Min Shun Huang, Shang Ju Tu, Feng Wen Huang, Kuo Hua Chang, Ming Lun Lee, Wei-Chi Lai

研究成果: Conference contribution

摘要

In this study, hetero-structure p-i-n type epitaxy wafers were deposited on the GaN/sapphire templates with different buffer layers by the MOVPE system. The absorption layers sandwiched in top p-GaN and bottom n + -GaN layers were designed into different short-period InGaN/GaN superlattice structures with specific pair numbers to maintain a total absorption thickness of 200 nm. As the buffer layer was properly adjusted, the V OC and J SC were enhanced by 35% and 95%, respectively. In addition to material qualities, the thickness of GaN buffer layers and piezoelectric-induced stain in the InGaN film itself also influenced the PV device performance.

原文English
主出版物標題Gallium Nitride Materials and Devices VI
DOIs
出版狀態Published - 2011 五月 13
事件Gallium Nitride Materials and Devices VI - San Francisco, CA, United States
持續時間: 2011 一月 242011 一月 27

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
7939
ISSN(列印)0277-786X

Other

OtherGallium Nitride Materials and Devices VI
國家United States
城市San Francisco, CA
期間11-01-2411-01-27

指紋

InGaN
Superlattices
Aluminum Oxide
Sapphire
Buffer layers
Buffer
sapphire
Absorption
buffers
Metallorganic vapor phase epitaxy
Epitaxial growth
Coloring Agents
Epitaxy
Heterostructures
Wafer
epitaxy
Template
templates
wafers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

引用此文

Yang, C. C., Sheu, J-K., Huang, M. S., Tu, S. J., Huang, F. W., Chang, K. H., ... Lai, W-C. (2011). Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers. 於 Gallium Nitride Materials and Devices VI [79391J] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 7939). https://doi.org/10.1117/12.876366
Yang, Chih Ciao ; Sheu, Jinn-Kong ; Huang, Min Shun ; Tu, Shang Ju ; Huang, Feng Wen ; Chang, Kuo Hua ; Lee, Ming Lun ; Lai, Wei-Chi. / Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers. Gallium Nitride Materials and Devices VI. 2011. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{be120ba8f4c34d1898fabf14a4503016,
title = "Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers",
abstract = "In this study, hetero-structure p-i-n type epitaxy wafers were deposited on the GaN/sapphire templates with different buffer layers by the MOVPE system. The absorption layers sandwiched in top p-GaN and bottom n + -GaN layers were designed into different short-period InGaN/GaN superlattice structures with specific pair numbers to maintain a total absorption thickness of 200 nm. As the buffer layer was properly adjusted, the V OC and J SC were enhanced by 35{\%} and 95{\%}, respectively. In addition to material qualities, the thickness of GaN buffer layers and piezoelectric-induced stain in the InGaN film itself also influenced the PV device performance.",
author = "Yang, {Chih Ciao} and Jinn-Kong Sheu and Huang, {Min Shun} and Tu, {Shang Ju} and Huang, {Feng Wen} and Chang, {Kuo Hua} and Lee, {Ming Lun} and Wei-Chi Lai",
year = "2011",
month = "5",
day = "13",
doi = "10.1117/12.876366",
language = "English",
isbn = "9780819484765",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Gallium Nitride Materials and Devices VI",

}

Yang, CC, Sheu, J-K, Huang, MS, Tu, SJ, Huang, FW, Chang, KH, Lee, ML & Lai, W-C 2011, Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers. 於 Gallium Nitride Materials and Devices VI., 79391J, Proceedings of SPIE - The International Society for Optical Engineering, 卷 7939, Gallium Nitride Materials and Devices VI, San Francisco, CA, United States, 11-01-24. https://doi.org/10.1117/12.876366

Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers. / Yang, Chih Ciao; Sheu, Jinn-Kong; Huang, Min Shun; Tu, Shang Ju; Huang, Feng Wen; Chang, Kuo Hua; Lee, Ming Lun; Lai, Wei-Chi.

Gallium Nitride Materials and Devices VI. 2011. 79391J (Proceedings of SPIE - The International Society for Optical Engineering; 卷 7939).

研究成果: Conference contribution

TY - GEN

T1 - Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers

AU - Yang, Chih Ciao

AU - Sheu, Jinn-Kong

AU - Huang, Min Shun

AU - Tu, Shang Ju

AU - Huang, Feng Wen

AU - Chang, Kuo Hua

AU - Lee, Ming Lun

AU - Lai, Wei-Chi

PY - 2011/5/13

Y1 - 2011/5/13

N2 - In this study, hetero-structure p-i-n type epitaxy wafers were deposited on the GaN/sapphire templates with different buffer layers by the MOVPE system. The absorption layers sandwiched in top p-GaN and bottom n + -GaN layers were designed into different short-period InGaN/GaN superlattice structures with specific pair numbers to maintain a total absorption thickness of 200 nm. As the buffer layer was properly adjusted, the V OC and J SC were enhanced by 35% and 95%, respectively. In addition to material qualities, the thickness of GaN buffer layers and piezoelectric-induced stain in the InGaN film itself also influenced the PV device performance.

AB - In this study, hetero-structure p-i-n type epitaxy wafers were deposited on the GaN/sapphire templates with different buffer layers by the MOVPE system. The absorption layers sandwiched in top p-GaN and bottom n + -GaN layers were designed into different short-period InGaN/GaN superlattice structures with specific pair numbers to maintain a total absorption thickness of 200 nm. As the buffer layer was properly adjusted, the V OC and J SC were enhanced by 35% and 95%, respectively. In addition to material qualities, the thickness of GaN buffer layers and piezoelectric-induced stain in the InGaN film itself also influenced the PV device performance.

UR - http://www.scopus.com/inward/record.url?scp=79955769721&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955769721&partnerID=8YFLogxK

U2 - 10.1117/12.876366

DO - 10.1117/12.876366

M3 - Conference contribution

AN - SCOPUS:79955769721

SN - 9780819484765

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Gallium Nitride Materials and Devices VI

ER -

Yang CC, Sheu J-K, Huang MS, Tu SJ, Huang FW, Chang KH 等. Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers. 於 Gallium Nitride Materials and Devices VI. 2011. 79391J. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.876366