Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers

Chih Ciao Yang, Jinn-Kong Sheu, Min Shun Huang, Shang Ju Tu, Feng Wen Huang, Kuo Hua Chang, Ming Lun Lee, Wei-Chi Lai

研究成果: Conference contribution

摘要

In this study, hetero-structure p-i-n type epitaxy wafers were deposited on the GaN/sapphire templates with different buffer layers by the MOVPE system. The absorption layers sandwiched in top p-GaN and bottom n + -GaN layers were designed into different short-period InGaN/GaN superlattice structures with specific pair numbers to maintain a total absorption thickness of 200 nm. As the buffer layer was properly adjusted, the V OC and J SC were enhanced by 35% and 95%, respectively. In addition to material qualities, the thickness of GaN buffer layers and piezoelectric-induced stain in the InGaN film itself also influenced the PV device performance.

原文English
主出版物標題Gallium Nitride Materials and Devices VI
DOIs
出版狀態Published - 2011 五月 13
事件Gallium Nitride Materials and Devices VI - San Francisco, CA, United States
持續時間: 2011 一月 242011 一月 27

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
7939
ISSN(列印)0277-786X

Other

OtherGallium Nitride Materials and Devices VI
國家/地區United States
城市San Francisco, CA
期間11-01-2411-01-27

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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