High-linearity In0.52Al0.48As/InxGa 1-xAs HEMT's have been successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). The studied devices exhibit high transconductance, low leakage current, high breakdown, and high-linearly operational regime due to good carrier confinement well as the low temperature growth In0.52Al0.48As barrier layer significantly suppresses buffer leakage current. Experimentally, linear operation current regime and gate voltage swing are improved in the structure utilizing a compositionally graded InxGa1-xAs channel due to the compositionally graded InxGa1-xAs channel enhance the device carrier mobility and confinement. An extrinsic transconductance as high as 302 mS/mm at gate length of 1.5 μm is achieved for the In 0.6Ga0.4As channel structure.
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