Characteristics of In0.52Al0.48As/In x Ga 1-x As HEMT's with various In x Ga 1-x As channels

Yen Wei Chen, Wei Chou Hsu, Rong Tay Hsu, Yue Huei Wu, Yeong Jia Chen

研究成果: Article同行評審

27 引文 斯高帕斯(Scopus)

摘要

High-linearity In0.52Al0.48As/InxGa 1-xAs HEMT's have been successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). The studied devices exhibit high transconductance, low leakage current, high breakdown, and high-linearly operational regime due to good carrier confinement well as the low temperature growth In0.52Al0.48As barrier layer significantly suppresses buffer leakage current. Experimentally, linear operation current regime and gate voltage swing are improved in the structure utilizing a compositionally graded InxGa1-xAs channel due to the compositionally graded InxGa1-xAs channel enhance the device carrier mobility and confinement. An extrinsic transconductance as high as 302 mS/mm at gate length of 1.5 μm is achieved for the In 0.6Ga0.4As channel structure.

原文English
頁(從 - 到)119-124
頁數6
期刊Solid-State Electronics
48
發行號1
DOIs
出版狀態Published - 2004 一月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「Characteristics of In<sub>0.52</sub>Al<sub>0.48</sub>As/In <sub>x</sub> Ga <sub>1-x</sub> As HEMT's with various In <sub>x</sub> Ga <sub>1-x</sub> As channels」主題。共同形成了獨特的指紋。

引用此