Characteristics of In0.53Ga0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD

Y. H. Wu; J. S. Su; W. C. Hsu; W. C. Liu; W. Lin

doi:10.1016/0038-1101(94)00176-G

Characteristics of In_0.53Ga_0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD

Y. H. Wu, J. S. Su, W. C. Hsu, W. C. Liu, W. Lin

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

We have successfully fabricated InGaAs/InP double and single heterostructure-emitter bipolar transistors. The double and single HEBTs exhibit common-emitter current gain of 120 and 41 along with offset voltage of 45 and 50 mV, respectively. These preliminary results demonstrate that HEBT structure can effectively provide a high electron injection and better hole confinement. Moreover, a symmetric structure for reducing the offset voltage is also proposed.

原文	English
頁（從 - 到）	767-769
頁數	3
期刊	Solid State Electronics
卷	38
發行號	4
DOIs	https://doi.org/10.1016/0038-1101(94)00176-G
出版狀態	Published - 1995 4月

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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10.1016/0038-1101(94)00176-G

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引用此

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title = "Characteristics of In0.53Ga0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD",

abstract = "We have successfully fabricated InGaAs/InP double and single heterostructure-emitter bipolar transistors. The double and single HEBTs exhibit common-emitter current gain of 120 and 41 along with offset voltage of 45 and 50 mV, respectively. These preliminary results demonstrate that HEBT structure can effectively provide a high electron injection and better hole confinement. Moreover, a symmetric structure for reducing the offset voltage is also proposed.",

author = "Wu, {Y. H.} and Su, {J. S.} and Hsu, {W. C.} and Liu, {W. C.} and W. Lin",

year = "1995",

month = apr,

doi = "10.1016/0038-1101(94)00176-G",

language = "English",

volume = "38",

pages = "767--769",

journal = "Solid-State Electronics",

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T1 - Characteristics of In0.53Ga0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD

AU - Wu, Y. H.

AU - Su, J. S.

AU - Hsu, W. C.

AU - Liu, W. C.

AU - Lin, W.

PY - 1995/4

Y1 - 1995/4

N2 - We have successfully fabricated InGaAs/InP double and single heterostructure-emitter bipolar transistors. The double and single HEBTs exhibit common-emitter current gain of 120 and 41 along with offset voltage of 45 and 50 mV, respectively. These preliminary results demonstrate that HEBT structure can effectively provide a high electron injection and better hole confinement. Moreover, a symmetric structure for reducing the offset voltage is also proposed.

AB - We have successfully fabricated InGaAs/InP double and single heterostructure-emitter bipolar transistors. The double and single HEBTs exhibit common-emitter current gain of 120 and 41 along with offset voltage of 45 and 50 mV, respectively. These preliminary results demonstrate that HEBT structure can effectively provide a high electron injection and better hole confinement. Moreover, a symmetric structure for reducing the offset voltage is also proposed.

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U2 - 10.1016/0038-1101(94)00176-G

DO - 10.1016/0038-1101(94)00176-G

M3 - Article

AN - SCOPUS:0029288183

VL - 38

SP - 767

EP - 769

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 4

ER -

Characteristics of In0.53Ga0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD

摘要

All Science Journal Classification (ASJC) codes

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Characteristics of In_0.53Ga_0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD