We have successfully fabricated InGaAs/InP double and single heterostructure-emitter bipolar transistors. The double and single HEBTs exhibit common-emitter current gain of 120 and 41 along with offset voltage of 45 and 50 mV, respectively. These preliminary results demonstrate that HEBT structure can effectively provide a high electron injection and better hole confinement. Moreover, a symmetric structure for reducing the offset voltage is also proposed.
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