Characteristics of In0.53Ga0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD

Y. H. Wu, J. S. Su, W. C. Hsu, W. C. Liu, W. Lin

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

We have successfully fabricated InGaAs/InP double and single heterostructure-emitter bipolar transistors. The double and single HEBTs exhibit common-emitter current gain of 120 and 41 along with offset voltage of 45 and 50 mV, respectively. These preliminary results demonstrate that HEBT structure can effectively provide a high electron injection and better hole confinement. Moreover, a symmetric structure for reducing the offset voltage is also proposed.

原文English
頁(從 - 到)767-769
頁數3
期刊Solid State Electronics
38
發行號4
DOIs
出版狀態Published - 1995 4月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「Characteristics of In0.53Ga0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD」主題。共同形成了獨特的指紋。

引用此