Characteristics of lateral diffused metal-oxide-semiconductor transistors with lightly doped drain implantation through gradual screen oxide

Characteristics of lateral diffused metal-oxide-semiconductor (LDMOS) transistors with gradual junction profile by self-alignment implant through dual thicknesses of screen oxide are presented in this letter. Compared with LDMOS transistors with traditional junction profile, this new device shows improved off-state breakdown voltage, less severe in Kirk effect, and wider electrical safe operating area; without sacrificing device drivability. Technology computer aided design (TCAD) simulation results reveal that this new device has smaller electric field both in off-and onstate bias conditions. Hot-carrier induced degradation of this new device under various stress conditions is also investigated and compared with that of the device with traditional junction profile.