Characteristics of lateral diffused metal-oxide-semiconductor transistors with lightly doped drain implantation through gradual screen oxide

Chin Rung Yan, Jone F. Chen, Chung Yi Lin, Hao Tang Hsu, Yu Jie Liao, Min Ti Yang, Chih Yuan Chen, Yin Chia Lin, Huei Haurng Chen

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Characteristics of lateral diffused metal-oxide-semiconductor (LDMOS) transistors with gradual junction profile by self-alignment implant through dual thicknesses of screen oxide are presented in this letter. Compared with LDMOS transistors with traditional junction profile, this new device shows improved off-state breakdown voltage, less severe in Kirk effect, and wider electrical safe operating area; without sacrificing device drivability. Technology computer aided design (TCAD) simulation results reveal that this new device has smaller electric field both in off-and onstate bias conditions. Hot-carrier induced degradation of this new device under various stress conditions is also investigated and compared with that of the device with traditional junction profile.

原文English
文章編號04CC07
期刊Japanese journal of applied physics
52
發行號4 PART 2
DOIs
出版狀態Published - 2013 4月

All Science Journal Classification (ASJC) codes

  • 一般工程
  • 一般物理與天文學

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