Characteristics of P-I-N laser detectors: Their dependence on wavelength and temperature

Y. K. Su, C. Y. Chang, T. S. Wu, B. D. Liu, Y. K. Fang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Wavelength and temperature-dependent characteristics of silicon P-I-N laser detectors are studied using the modified Baraff theory.Both the electron or hole injection effect and photogeneration effect are considered in the calculation of the power spectral density of multiplication noise and efficiencies.The results thus obtained are compared with previous papers where the photogeneration effect was neglected.

原文English
頁(從 - 到)3510-3512
頁數3
期刊Applied optics
18
發行號20
DOIs
出版狀態Published - 1979 十月 15

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 工程(雜項)
  • 電氣與電子工程

指紋

深入研究「Characteristics of P-I-N laser detectors: Their dependence on wavelength and temperature」主題。共同形成了獨特的指紋。

引用此