Characteristics of P-substrate small-aperture holey light-emitting diodes for fiber-optic applications

Hung Pin D. Yang, Jui Nung Liu, Fang I. Lai, Hao Chung Kuo, Jim Y. Chi

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A small-aperture oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a small-aperture holey structure at the center for light extraction. The internally reflected spontaneous emission can be extracted and collimated out of the etched hole. High-resolution imaging studies indicate that the device emits with a narrower beam mainly through the central etched hole region made it suitable for fiber-optic applications.

原文English
頁(從 - 到)2941-2943
頁數3
期刊Japanese Journal of Applied Physics
46
發行號5 A
DOIs
出版狀態Published - 2007 5月 8

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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