Characteristics of profiled lightly-doped drain MOSFETs

B. D. Liu; I. K. Chien

doi:10.1080/00207219208925705

Characteristics of profiled lightly-doped drain MOSFETs

B. D. Liu
, I. K. Chien

電機工程學系

研究成果: Article › 同行評審

摘要

Profiled lightly-doped drain (PLDD) MOSFETs are fabricated. Their characteristics are compared with those of other device structures. The current driving capability and transconductance of LDD devices can be increased with PLDD structures.

原文	English
頁（從 - 到）	711-716
頁數	6
期刊	International Journal of Electronics
卷	73
發行號	4
DOIs	https://doi.org/10.1080/00207219208925705
出版狀態	Published - 1992 10月

All Science Journal Classification (ASJC) codes

電氣與電子工程

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10.1080/00207219208925705

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title = "Characteristics of profiled lightly-doped drain MOSFETs",

abstract = "Profiled lightly-doped drain (PLDD) MOSFETs are fabricated. Their characteristics are compared with those of other device structures. The current driving capability and transconductance of LDD devices can be increased with PLDD structures.",

author = "Liu, \{B. D.\} and Chien, \{I. K.\}",

note = "Funding Information: The authors would like to thank Dr C. Y. Chang for his valuable suggestion. This work was supported in part by the National Science Council, Republic of China.",

year = "1992",

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AU - Chien, I. K.

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N2 - Profiled lightly-doped drain (PLDD) MOSFETs are fabricated. Their characteristics are compared with those of other device structures. The current driving capability and transconductance of LDD devices can be increased with PLDD structures.

AB - Profiled lightly-doped drain (PLDD) MOSFETs are fabricated. Their characteristics are compared with those of other device structures. The current driving capability and transconductance of LDD devices can be increased with PLDD structures.

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JO - International Journal of Electronics

JF - International Journal of Electronics

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Characteristics of profiled lightly-doped drain MOSFETs

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