Characteristics of profiled lightly-doped drain MOSFETs

B. D. Liu; I. K. Chien

doi:10.1080/00207219208925705

Characteristics of profiled lightly-doped drain MOSFETs

B. D. Liu
, I. K. Chien

電機工程學系

研究成果: Article › 同行評審

摘要

Profiled lightly-doped drain (PLDD) MOSFETs are fabricated. Their characteristics are compared with those of other device structures. The current driving capability and transconductance of LDD devices can be increased with PLDD structures.

原文	English
頁（從 - 到）	711-716
頁數	6
期刊	International Journal of Electronics
卷	73
發行號	4
DOIs	https://doi.org/10.1080/00207219208925705
出版狀態	Published - 1992 10月

UN SDG

此研究成果有助於以下永續發展目標

SDG 7 經濟實惠的清潔能源

All Science Journal Classification (ASJC) codes

電氣與電子工程

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10.1080/00207219208925705

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@article{1331b1236b724299acbce63870a1af9b,

title = "Characteristics of profiled lightly-doped drain MOSFETs",

abstract = "Profiled lightly-doped drain (PLDD) MOSFETs are fabricated. Their characteristics are compared with those of other device structures. The current driving capability and transconductance of LDD devices can be increased with PLDD structures.",

author = "Liu, \{B. D.\} and Chien, \{I. K.\}",

note = "Funding Information: The authors would like to thank Dr C. Y. Chang for his valuable suggestion. This work was supported in part by the National Science Council, Republic of China.",

year = "1992",

month = oct,

doi = "10.1080/00207219208925705",

language = "English",

volume = "73",

pages = "711--716",

journal = "International Journal of Electronics",

issn = "0020-7217",

publisher = "Taylor and Francis Ltd.",

number = "4",

}

TY - JOUR

T1 - Characteristics of profiled lightly-doped drain MOSFETs

AU - Liu, B. D.

AU - Chien, I. K.

N1 - Funding Information: The authors would like to thank Dr C. Y. Chang for his valuable suggestion. This work was supported in part by the National Science Council, Republic of China.

PY - 1992/10

Y1 - 1992/10

N2 - Profiled lightly-doped drain (PLDD) MOSFETs are fabricated. Their characteristics are compared with those of other device structures. The current driving capability and transconductance of LDD devices can be increased with PLDD structures.

AB - Profiled lightly-doped drain (PLDD) MOSFETs are fabricated. Their characteristics are compared with those of other device structures. The current driving capability and transconductance of LDD devices can be increased with PLDD structures.

UR - https://www.scopus.com/pages/publications/84946349732

UR - https://www.scopus.com/pages/publications/84946349732#tab=citedBy

U2 - 10.1080/00207219208925705

DO - 10.1080/00207219208925705

M3 - Article

AN - SCOPUS:84946349732

SN - 0020-7217

VL - 73

SP - 711

EP - 716

JO - International Journal of Electronics

JF - International Journal of Electronics

IS - 4

ER -

Characteristics of profiled lightly-doped drain MOSFETs

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