Characteristics of quantum dots and single-phase p-CuInSe2 nanowire arrays electrodeposited as schottky diodes with a silver contact

Yu Song Cheng, Na Fu Wang, Yu Zen Tsai, Jia Jun Lin, Mau Phon Houng

研究成果: Article

摘要

CuInSe2 nanowire (NW) arrays were prepared in a heated electrolyte (45C) through anodized aluminum oxide template–assisted pulse electrodeposition. After the CuInSe2 NWs were as-grown, grazing incidence X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) revealed the recrystallization status of the CuInSe2 NWs annealed at temperatures ranging from 250C to 550C. The results indicated that the NWs underwent a phase transformation from the (204/220) plane to the (112) plane. Additionally, the material particle size and quantum dots were measured using HRTEM and ultraviolet/visible spectroscopy. The particle size of the as-grown CuInSe2 NWs ranged from 3.8 to 8 nm. The as-grown CuInSe2 NWs exhibited a blue-shift in the material absorption band at 1100 and 1200 nm compared with those annealed at 550C. The results of scanning electron microscopy had a diameter and length of 80 nm and 2.2 μm, respectively. Mott–Schottky and ohmic contact plots revealed that the CuInSe2 NWs were p-type semiconductors. Moreover, the different leakage current mechanisms of the nonideal Schottky diode were studied. Finally, near-ideal Schottky barrier diodes were obtained at an annealing temperature of 550C, and their work function was estimated to be in the range of 5.04–5.13 eV.

原文English
頁(從 - 到)N221-N226
期刊ECS Journal of Solid State Science and Technology
6
發行號12
DOIs
出版狀態Published - 2017 一月 1

指紋

High resolution transmission electron microscopy
Silver
Semiconductor quantum dots
Nanowires
Diodes
Particle size
Schottky barrier diodes
Ohmic contacts
Aluminum Oxide
Ultraviolet visible spectroscopy
Electrodeposition
Leakage currents
Electrolytes
Absorption spectra
Phase transitions
Annealing
Semiconductor materials
Aluminum
X ray diffraction
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

引用此文

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title = "Characteristics of quantum dots and single-phase p-CuInSe2 nanowire arrays electrodeposited as schottky diodes with a silver contact",
abstract = "CuInSe2 nanowire (NW) arrays were prepared in a heated electrolyte (45◦C) through anodized aluminum oxide template–assisted pulse electrodeposition. After the CuInSe2 NWs were as-grown, grazing incidence X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) revealed the recrystallization status of the CuInSe2 NWs annealed at temperatures ranging from 250◦C to 550◦C. The results indicated that the NWs underwent a phase transformation from the (204/220) plane to the (112) plane. Additionally, the material particle size and quantum dots were measured using HRTEM and ultraviolet/visible spectroscopy. The particle size of the as-grown CuInSe2 NWs ranged from 3.8 to 8 nm. The as-grown CuInSe2 NWs exhibited a blue-shift in the material absorption band at 1100 and 1200 nm compared with those annealed at 550◦C. The results of scanning electron microscopy had a diameter and length of 80 nm and 2.2 μm, respectively. Mott–Schottky and ohmic contact plots revealed that the CuInSe2 NWs were p-type semiconductors. Moreover, the different leakage current mechanisms of the nonideal Schottky diode were studied. Finally, near-ideal Schottky barrier diodes were obtained at an annealing temperature of 550◦C, and their work function was estimated to be in the range of 5.04–5.13 eV.",
author = "Cheng, {Yu Song} and Wang, {Na Fu} and Tsai, {Yu Zen} and Lin, {Jia Jun} and Houng, {Mau Phon}",
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T1 - Characteristics of quantum dots and single-phase p-CuInSe2 nanowire arrays electrodeposited as schottky diodes with a silver contact

AU - Cheng, Yu Song

AU - Wang, Na Fu

AU - Tsai, Yu Zen

AU - Lin, Jia Jun

AU - Houng, Mau Phon

PY - 2017/1/1

Y1 - 2017/1/1

N2 - CuInSe2 nanowire (NW) arrays were prepared in a heated electrolyte (45◦C) through anodized aluminum oxide template–assisted pulse electrodeposition. After the CuInSe2 NWs were as-grown, grazing incidence X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) revealed the recrystallization status of the CuInSe2 NWs annealed at temperatures ranging from 250◦C to 550◦C. The results indicated that the NWs underwent a phase transformation from the (204/220) plane to the (112) plane. Additionally, the material particle size and quantum dots were measured using HRTEM and ultraviolet/visible spectroscopy. The particle size of the as-grown CuInSe2 NWs ranged from 3.8 to 8 nm. The as-grown CuInSe2 NWs exhibited a blue-shift in the material absorption band at 1100 and 1200 nm compared with those annealed at 550◦C. The results of scanning electron microscopy had a diameter and length of 80 nm and 2.2 μm, respectively. Mott–Schottky and ohmic contact plots revealed that the CuInSe2 NWs were p-type semiconductors. Moreover, the different leakage current mechanisms of the nonideal Schottky diode were studied. Finally, near-ideal Schottky barrier diodes were obtained at an annealing temperature of 550◦C, and their work function was estimated to be in the range of 5.04–5.13 eV.

AB - CuInSe2 nanowire (NW) arrays were prepared in a heated electrolyte (45◦C) through anodized aluminum oxide template–assisted pulse electrodeposition. After the CuInSe2 NWs were as-grown, grazing incidence X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) revealed the recrystallization status of the CuInSe2 NWs annealed at temperatures ranging from 250◦C to 550◦C. The results indicated that the NWs underwent a phase transformation from the (204/220) plane to the (112) plane. Additionally, the material particle size and quantum dots were measured using HRTEM and ultraviolet/visible spectroscopy. The particle size of the as-grown CuInSe2 NWs ranged from 3.8 to 8 nm. The as-grown CuInSe2 NWs exhibited a blue-shift in the material absorption band at 1100 and 1200 nm compared with those annealed at 550◦C. The results of scanning electron microscopy had a diameter and length of 80 nm and 2.2 μm, respectively. Mott–Schottky and ohmic contact plots revealed that the CuInSe2 NWs were p-type semiconductors. Moreover, the different leakage current mechanisms of the nonideal Schottky diode were studied. Finally, near-ideal Schottky barrier diodes were obtained at an annealing temperature of 550◦C, and their work function was estimated to be in the range of 5.04–5.13 eV.

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