Characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation depths

Chin Rung Yan, Jone F. Chen, Ya Jui Lee, Wei Shiang Huang, Meng Ju Huang, Chih Yuan Chen, Ying Chia Lin, Kuei Fen Chang, Huei Haurng Chen

研究成果: Article同行評審

摘要

The program efficiency and endurance characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation (SASTI) depths are investigated. Although a large SA-STI depth improves the neighboring floating gate coupling issue and gate coupling ratio, a low program efficiency is also introduced. In addition, lower endurance characteristics are observed in the device with a large SA-STI depth than in the device with a small SA-STI depth. The mechanisms underlying such unfavorable results are discussed on the basis of experimental data and technology computer-aided design simulations.

原文English
文章編號11NA06
期刊Japanese journal of applied physics
52
發行號11 PART 2
DOIs
出版狀態Published - 2013 11月

All Science Journal Classification (ASJC) codes

  • 一般工程
  • 一般物理與天文學

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