摘要
Sputtered Ru and Ru-C films 5 nm thick are employed in the Cu/barrier/ SiO2/Si system, and their performances as the diffusion barrier as well as the seed layer for direct Cu electroplating are investigated in parallel. Based on the sheet resistance measurement and energy dispersive X-ray line profiles, the 5 nm Ru-C film can retard the diffusion of Cu after a prolonged (30 min) annealing up to 700°C, while the Ru film is an effective barrier up to only 400°C. Direct electroplating of Cu is successfully carried out on both Ru and Ru-C films, which proves that Ru-C is a Cu seed layer in addition to being a robust diffusion barrier. The microstructural characteristics of ultrathin Ru and Ru-C films are also examined, indicating that the superior barrier performance of the 5 nm Ru-C film is associated with its inferior crystallinity and resistance to agglomeration at elevated temperatures.
| 原文 | English |
|---|---|
| 頁（從 - 到） | H724-H728 |
| 期刊 | Journal of the Electrochemical Society |
| 卷 | 156 |
| 發行號 | 9 |
| DOIs | |
| 出版狀態 | Published - 2009 8月 7 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 可再生能源、永續發展與環境
- 表面、塗料和薄膜
- 電化學
- 材料化學
UN SDG
此研究成果有助於以下永續發展目標
