Characteristics of thin-film-transistors based on Zn-In-Sn-O thin films prepared by co-sputtering system

This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65V/dec, a field-effect mobility (μFE) of 2.57cm ²V ^-1 s ^-1, and an on/off current ratio (I _on/I _off) of 10 ⁴. The small SS and an acceptable FE were associated with a smaller roughness and stable composition of ZITO channel layer.