Characteristics of thin-film-transistors based on Zn-In-Sn-O thin films prepared by co-sputtering system

研究成果: Article

1 引文 (Scopus)

摘要

This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65V/dec, a field-effect mobility (μFE) of 2.57cm 2V -1 s -1, and an on/off current ratio (I on/I off) of 10 4. The small SS and an acceptable FE were associated with a smaller roughness and stable composition of ZITO channel layer.

原文English
頁(從 - 到)571-574
頁數4
期刊Materials Transactions
53
發行號3
DOIs
出版狀態Published - 2012 四月 5

指紋

Thin film transistors
Sputtering
transistors
sputtering
Thin films
thin films
Chemical analysis
Electric properties
Surface roughness
chemical composition
depletion
roughness
adjusting
electrical properties
matrices

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

引用此文

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abstract = "This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65V/dec, a field-effect mobility (μFE) of 2.57cm 2V -1 s -1, and an on/off current ratio (I on/I off) of 10 4. The small SS and an acceptable FE were associated with a smaller roughness and stable composition of ZITO channel layer.",
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AU - Chen, K. J.

AU - Hung, F. Y.

AU - Lui, T. S.

AU - Chang, S. J.

AU - Liao, T. Y.

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