This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65V/dec, a field-effect mobility (μFE) of 2.57cm 2V -1 s -1, and an on/off current ratio (I on/I off) of 10 4. The small SS and an acceptable FE were associated with a smaller roughness and stable composition of ZITO channel layer.
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