Characteristics of TiO2 metal-semiconductor-metal photodetectors with O2 plasma treatment

L. W. Ji, I. T. Tang, S. J. Young, T. H. Meen, J. K. Tsai, T. C. Wu, S. J. Chang, Y. P. Luo, K. C. Lee, J. C. Lin, B. Y. Lee

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

In this study, titanium dioxide (TiO2) films were prepared on Corning glass substrates by radio frequency (RF) magnetron sputtering and treated without and with O2 plasma conditions, and then were used to fabricate metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs). The effects of the changes on TiO2 films were investigated by using field-emission scanning electron microscope (FE-SEM), photoluminescence (PL) system and four-point probe measurement. With a 360-nm illumination and 5 V applied bias, it was found that the responsivities of the fabricated TiO2 PDs without and with 2 minutes O2 plasma treatment were 36 and 153 A/W, respectively.

原文English
主出版物標題Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
編輯Xiaohong Jiang, Shaozi Li, Ying Dai, Yun Cheng
發行者Institute of Electrical and Electronics Engineers Inc.
頁面63-66
頁數4
ISBN(電子)9781479931965
DOIs
出版狀態Published - 2014 11月 5
事件2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014 - Sapporo City, Hokkaido, Japan
持續時間: 2014 4月 262014 4月 28

出版系列

名字Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
1

Other

Other2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
國家/地區Japan
城市Sapporo City, Hokkaido
期間14-04-2614-04-28

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

指紋

深入研究「Characteristics of TiO2 metal-semiconductor-metal photodetectors with O2 plasma treatment」主題。共同形成了獨特的指紋。

引用此