Characterization of 19.9%-efficient CIGS absorbers

Ingrid Repins; Miguel Contreras; Manuel Romero; Yanfa Yan; Wyatt Metzger; Jian Li; Steve Johnston; Brian Egaas; Clay Dehart; John Scharf; Brian E. McCandless; Rommel Noufi

doi:10.1109/PVSC.2008.4922628

Characterization of 19.9%-efficient CIGS absorbers

Ingrid Repins
, Miguel Contreras
, Manuel Romero
, Yanfa Yan
, Wyatt Metzger
, Jian Li
, Steve Johnston
, Brian Egaas
, Clay Dehart
, John Scharf
, Brian E. McCandless
, Rommel Noufi

航空太空工程學系

研究成果: Conference contribution

73 引文斯高帕斯（Scopus）

摘要

We recently reported a new record total-area efficiency, 19.9%, for CuInGaSe2 (CIGS)-based thin-film solar cells [1]. Current-voltage analysis indicates that improved performance in the record device is due to reduced recombination. The reduced recombination was achieved by terminating the processing with a Ga-poor (In-rich) layer, which has led to a number of devices exceeding the prior (19.5%) efficiency record. This paper documents the properties of the high-efficiency CIGS by a variety of characterization techniques, with an emphasis on identifying near-surface properties associated with the modified processing.

原文	English
主出版物標題	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs	https://doi.org/10.1109/PVSC.2008.4922628
出版狀態	Published - 2008
事件	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States 持續時間: 2008 5月 11 → 2008 5月 16

出版系列

名字	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN（列印）	0160-8371

Other

Other	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
國家/地區	United States
城市	San Diego, CA
期間	08-05-11 → 08-05-16

UN SDG

此研究成果有助於以下永續發展目標

SDG 7 經濟實惠的清潔能源

All Science Journal Classification (ASJC) codes

控制與系統工程
工業與製造工程
電氣與電子工程

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10.1109/PVSC.2008.4922628

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Repins, I., Contreras, M., Romero, M., Yan, Y., Metzger, W., Li, J., Johnston, S., Egaas, B., Dehart, C., Scharf, J., McCandless, B. E., & Noufi, R. (2008). Characterization of 19.9%-efficient CIGS absorbers. 於 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 文章 4922628 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2008.4922628

@inproceedings{079e0246e4654fa1ba12578eede012e0,

title = "Characterization of 19.9\%-efficient CIGS absorbers",

abstract = "We recently reported a new record total-area efficiency, 19.9\%, for CuInGaSe2 (CIGS)-based thin-film solar cells [1]. Current-voltage analysis indicates that improved performance in the record device is due to reduced recombination. The reduced recombination was achieved by terminating the processing with a Ga-poor (In-rich) layer, which has led to a number of devices exceeding the prior (19.5\%) efficiency record. This paper documents the properties of the high-efficiency CIGS by a variety of characterization techniques, with an emphasis on identifying near-surface properties associated with the modified processing.",

author = "Ingrid Repins and Miguel Contreras and Manuel Romero and Yanfa Yan and Wyatt Metzger and Jian Li and Steve Johnston and Brian Egaas and Clay Dehart and John Scharf and McCandless, \{Brian E.\} and Rommel Noufi",

year = "2008",

doi = "10.1109/PVSC.2008.4922628",

language = "English",

isbn = "9781424416417",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

booktitle = "33rd IEEE Photovoltaic Specialists Conference, PVSC 2008",

note = "33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 ; Conference date: 11-05-2008 Through 16-05-2008",

}

Repins, I, Contreras, M, Romero, M, Yan, Y, Metzger, W, Li, J, Johnston, S, Egaas, B, Dehart, C, Scharf, J, McCandless, BE & Noufi, R 2008, Characterization of 19.9%-efficient CIGS absorbers. 於 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008., 4922628, Conference Record of the IEEE Photovoltaic Specialists Conference, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, United States, 08-05-11. https://doi.org/10.1109/PVSC.2008.4922628

TY - GEN

T1 - Characterization of 19.9%-efficient CIGS absorbers

AU - Repins, Ingrid

AU - Contreras, Miguel

AU - Romero, Manuel

AU - Yan, Yanfa

AU - Metzger, Wyatt

AU - Li, Jian

AU - Johnston, Steve

AU - Egaas, Brian

AU - Dehart, Clay

AU - Scharf, John

AU - McCandless, Brian E.

AU - Noufi, Rommel

PY - 2008

Y1 - 2008

N2 - We recently reported a new record total-area efficiency, 19.9%, for CuInGaSe2 (CIGS)-based thin-film solar cells [1]. Current-voltage analysis indicates that improved performance in the record device is due to reduced recombination. The reduced recombination was achieved by terminating the processing with a Ga-poor (In-rich) layer, which has led to a number of devices exceeding the prior (19.5%) efficiency record. This paper documents the properties of the high-efficiency CIGS by a variety of characterization techniques, with an emphasis on identifying near-surface properties associated with the modified processing.

AB - We recently reported a new record total-area efficiency, 19.9%, for CuInGaSe2 (CIGS)-based thin-film solar cells [1]. Current-voltage analysis indicates that improved performance in the record device is due to reduced recombination. The reduced recombination was achieved by terminating the processing with a Ga-poor (In-rich) layer, which has led to a number of devices exceeding the prior (19.5%) efficiency record. This paper documents the properties of the high-efficiency CIGS by a variety of characterization techniques, with an emphasis on identifying near-surface properties associated with the modified processing.

UR - https://www.scopus.com/pages/publications/84879726630

UR - https://www.scopus.com/pages/publications/84879726630#tab=citedBy

U2 - 10.1109/PVSC.2008.4922628

DO - 10.1109/PVSC.2008.4922628

M3 - Conference contribution

AN - SCOPUS:84879726630

SN - 9781424416417

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008

T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008

Y2 - 11 May 2008 through 16 May 2008

ER -

Characterization of 19.9%-efficient CIGS absorbers

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