Characterization of a n-type Field Effect Transistor made from direct growth and patterning of single wall carbon nanotubes film

Chen Da Tsai, Chih Sheng Yang, S. H. Shiau, C. W. Liu, Chie Gau

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

Characterization of a n-type Field Effect Transistor (FET) made from direct growth and patterning of a dense single wall carbon nanotubes (SWNTs) network on a silicon substrate, using alcohol as source gas, is presented. This SWNTs network film made into FET has a special feature which is significantly different from the amorphous silicon thin film transistor (TFT) or the MOSFET. The primary n-type nature of the SWNTs FET exhibits ambipolar characteristic. In addition, different sizes of channel for the FET have been made to examine if the scaling law used in TFT or MOSFET applicable. The results found that unlike the mobility of silicon film measured in TFT or MOSFET which do not depend on the size of the channel, both the mobility and the transconductance of the SWNTs film measured in FET increases with the channel width. The current device has an advantage to improve the mobility simply be making a wider channel. More discussions on the characteristics of the SWNTs film FET are provided.

原文English
主出版物標題3CA 2010 - 2010 International Symposium on Computer, Communication, Control and Automation
頁面589-593
頁數5
DOIs
出版狀態Published - 2010 九月 3
事件2010 International Symposium on Computer, Communication, Control and Automation, 3CA 2010 - Tainan, Taiwan
持續時間: 2010 五月 52010 五月 7

出版系列

名字3CA 2010 - 2010 International Symposium on Computer, Communication, Control and Automation
2

Other

Other2010 International Symposium on Computer, Communication, Control and Automation, 3CA 2010
國家Taiwan
城市Tainan
期間10-05-0510-05-07

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Hardware and Architecture
  • Control and Systems Engineering

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