TY - GEN
T1 - Characterization of a n-type Field Effect Transistor made from direct growth and patterning of single wall carbon nanotubes film
AU - Tsai, Chen Da
AU - Yang, Chih Sheng
AU - Shiau, S. H.
AU - Liu, C. W.
AU - Gau, Chie
PY - 2010/9/3
Y1 - 2010/9/3
N2 - Characterization of a n-type Field Effect Transistor (FET) made from direct growth and patterning of a dense single wall carbon nanotubes (SWNTs) network on a silicon substrate, using alcohol as source gas, is presented. This SWNTs network film made into FET has a special feature which is significantly different from the amorphous silicon thin film transistor (TFT) or the MOSFET. The primary n-type nature of the SWNTs FET exhibits ambipolar characteristic. In addition, different sizes of channel for the FET have been made to examine if the scaling law used in TFT or MOSFET applicable. The results found that unlike the mobility of silicon film measured in TFT or MOSFET which do not depend on the size of the channel, both the mobility and the transconductance of the SWNTs film measured in FET increases with the channel width. The current device has an advantage to improve the mobility simply be making a wider channel. More discussions on the characteristics of the SWNTs film FET are provided.
AB - Characterization of a n-type Field Effect Transistor (FET) made from direct growth and patterning of a dense single wall carbon nanotubes (SWNTs) network on a silicon substrate, using alcohol as source gas, is presented. This SWNTs network film made into FET has a special feature which is significantly different from the amorphous silicon thin film transistor (TFT) or the MOSFET. The primary n-type nature of the SWNTs FET exhibits ambipolar characteristic. In addition, different sizes of channel for the FET have been made to examine if the scaling law used in TFT or MOSFET applicable. The results found that unlike the mobility of silicon film measured in TFT or MOSFET which do not depend on the size of the channel, both the mobility and the transconductance of the SWNTs film measured in FET increases with the channel width. The current device has an advantage to improve the mobility simply be making a wider channel. More discussions on the characteristics of the SWNTs film FET are provided.
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U2 - 10.1109/3CA.2010.5533748
DO - 10.1109/3CA.2010.5533748
M3 - Conference contribution
AN - SCOPUS:77956110960
SN - 9781424455669
T3 - 3CA 2010 - 2010 International Symposium on Computer, Communication, Control and Automation
SP - 589
EP - 593
BT - 3CA 2010 - 2010 International Symposium on Computer, Communication, Control and Automation
T2 - 2010 International Symposium on Computer, Communication, Control and Automation, 3CA 2010
Y2 - 5 May 2010 through 7 May 2010
ER -