Characterization of activated non-evaporable porous Ti and Ti-Zr-V getter films by synchrotron radiation photoemission spectroscopy

Chien Cheng Li, Jow Lay Huang, Ran Jin Lin, Chia Hao Chen, Ding Fwu Lii

研究成果: Article同行評審

24 引文 斯高帕斯(Scopus)

摘要

Highly porous Ti and TiZrV film getters on (100) silicon substrates, grown by the glancing angle deposition of dc magnetron sputtering method, were used to study the activation process. The effect of activation temperature on the reducing degree of the porous Ti and TiZrV films were investigated by synchrotron radiation photoemission spectroscopy (SRPES). Elemental carbon absorbed on the surface of the Ti film, exposed in air, will be transformed to a Ti carbide phase, however, that which is on the surface of the TiZrV film will be completely removed by heat at 250 °C or above. The oxidized Ti in a porous TiZrV film is more easily reduced than that in the porous Ti films. The breakdown of V-O and Ti-O bonds on the TiZrV film surface is easier than that of the Zr-O bond. We suggest that the decrease of reducing temperature of oxidized TiZrV, comparing with that of oxidized Ti, is caused by the displacement reaction of Zr on oxidized Ti or oxidized V.

原文English
頁(從 - 到)1121-1125
頁數5
期刊Thin Solid Films
515
發行號3
DOIs
出版狀態Published - 2006 11月 23

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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