Characterization of AlGaN/GaN Metal- Semiconductor-Metal Photodetectors With a Low-Temperature AlGaN Interlayer

K. H. Lee; S. J. Chang; Y. C. Wang; C. L. Yu; P. C. Chang; S. L. Wu

doi:10.1109/JSEN.2009.2021190

Characterization of AlGaN/GaN Metal- Semiconductor-Metal Photodetectors With a Low-Temperature AlGaN Interlayer

K. H. Lee, S. J. Chang, Y. C. Wang, C. L. Yu, P. C. Chang, S. L. Wu

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

AlGaN/GaN metal-semiconductor-metal photodetectors (MSM PDs) with a low-temperature (LT) AlGaN interlayer (IL) were fabricated. Compared with the conventional AlGaN/GaN MSM PD, it was found that leakage current can be suppressed by insertion of a LT AlGaN IL due to the reduction of surface pits and improvement of crystalline quality. It was also found that larger photoresponsivity can be achieved due to the enhanced electric field strength as a result of inserting a LT AlGaN IL. Furthermore, suppressed photoconductive gain, lower noise level, and larger detectivity of MSM PD can also be achieved by using a LT AlGaN IL.

原文	English
頁（從 - 到）	723-727
頁數	5
期刊	IEEE Sensors Journal
卷	9
發行號	6
DOIs	https://doi.org/10.1109/JSEN.2009.2021190
出版狀態	Published - 2009 6月

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電氣與電子工程

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10.1109/JSEN.2009.2021190

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@article{5a9232795f9a4e1d9418a02d91d23504,

title = "Characterization of AlGaN/GaN Metal- Semiconductor-Metal Photodetectors With a Low-Temperature AlGaN Interlayer",

abstract = "AlGaN/GaN metal-semiconductor-metal photodetectors (MSM PDs) with a low-temperature (LT) AlGaN interlayer (IL) were fabricated. Compared with the conventional AlGaN/GaN MSM PD, it was found that leakage current can be suppressed by insertion of a LT AlGaN IL due to the reduction of surface pits and improvement of crystalline quality. It was also found that larger photoresponsivity can be achieved due to the enhanced electric field strength as a result of inserting a LT AlGaN IL. Furthermore, suppressed photoconductive gain, lower noise level, and larger detectivity of MSM PD can also be achieved by using a LT AlGaN IL.",

author = "Lee, {K. H.} and Chang, {S. J.} and Wang, {Y. C.} and Yu, {C. L.} and Chang, {P. C.} and Wu, {S. L.}",

note = "Funding Information: Manuscript received September 09, 2008; accepted December 26, 2008. Current version published May 08, 2009. This work was supported in part by the National Science Council under Contract NSC 96-2221-E-232-004. The associate editor coordinating the review of this paper and approving it for publication was Dr. M. Abedin.",

year = "2009",

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doi = "10.1109/JSEN.2009.2021190",

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journal = "IEEE Sensors Journal",

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T1 - Characterization of AlGaN/GaN Metal- Semiconductor-Metal Photodetectors With a Low-Temperature AlGaN Interlayer

AU - Lee, K. H.

AU - Chang, S. J.

AU - Wang, Y. C.

AU - Yu, C. L.

AU - Chang, P. C.

AU - Wu, S. L.

N1 - Funding Information: Manuscript received September 09, 2008; accepted December 26, 2008. Current version published May 08, 2009. This work was supported in part by the National Science Council under Contract NSC 96-2221-E-232-004. The associate editor coordinating the review of this paper and approving it for publication was Dr. M. Abedin.

PY - 2009/6

Y1 - 2009/6

N2 - AlGaN/GaN metal-semiconductor-metal photodetectors (MSM PDs) with a low-temperature (LT) AlGaN interlayer (IL) were fabricated. Compared with the conventional AlGaN/GaN MSM PD, it was found that leakage current can be suppressed by insertion of a LT AlGaN IL due to the reduction of surface pits and improvement of crystalline quality. It was also found that larger photoresponsivity can be achieved due to the enhanced electric field strength as a result of inserting a LT AlGaN IL. Furthermore, suppressed photoconductive gain, lower noise level, and larger detectivity of MSM PD can also be achieved by using a LT AlGaN IL.

AB - AlGaN/GaN metal-semiconductor-metal photodetectors (MSM PDs) with a low-temperature (LT) AlGaN interlayer (IL) were fabricated. Compared with the conventional AlGaN/GaN MSM PD, it was found that leakage current can be suppressed by insertion of a LT AlGaN IL due to the reduction of surface pits and improvement of crystalline quality. It was also found that larger photoresponsivity can be achieved due to the enhanced electric field strength as a result of inserting a LT AlGaN IL. Furthermore, suppressed photoconductive gain, lower noise level, and larger detectivity of MSM PD can also be achieved by using a LT AlGaN IL.

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JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

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Characterization of AlGaN/GaN Metal- Semiconductor-Metal Photodetectors With a Low-Temperature AlGaN Interlayer

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