Characterization of Ba(Mg1/3Ta2/3)O3) and Bi2(Zn1/3Nb2/3)2O7 microwave dielectrics in optical and microwave frequency regions

Hsiu Fung Cheng, Yi Chun Chen, Ying Hao Zhu, I. Nian Lin

研究成果: Paper

摘要

Ba(Mg1/3Ta2/3)O3, BMT, and Bi2(Zn1/3Nb2/3)2O7, BiZN, thin films were grown on [100] MgO single crystal substrates using pulsed laser deposition process. The high-frequency dielectric properties of thus obtained thin films were measured using optical transmission spectroscopy. Characteristics of BMT thin films were compared with those of BiZN thin films. BMT films need higher substrate temperature (800?) and longer deposition time (75 min) than those of BiZN thin films for getting better crystallinity. The index of refraction n and the absorption coefficient k of these films derived from their optical transmission spectra reveal that both optical parameters (n, k) for the BMT films are smaller than those of BiZN films. These behaviors are intimately correlated with lower microwave dielectric constant K and higher quality factor Q×f characteristics for BMT bulk materials, as compared with those of BiZN bulk materials.

原文English
頁數1
出版狀態Published - 2000 十二月 1
事件12 Asia-Pacific Microwave Conference - Sydney, Australia
持續時間: 2000 十二月 32000 十二月 6

Other

Other12 Asia-Pacific Microwave Conference
城市Sydney, Australia
期間00-12-0300-12-06

    指紋

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此

Cheng, H. F., Chen, Y. C., Zhu, Y. H., & Lin, I. N. (2000). Characterization of Ba(Mg1/3Ta2/3)O3) and Bi2(Zn1/3Nb2/3)2O7 microwave dielectrics in optical and microwave frequency regions. 論文發表於 12 Asia-Pacific Microwave Conference, Sydney, Australia, .