CHARACTERIZATION OF DEEP-LEVEL DEFECTS IN SILICON FILMS GROWN BY MOLECULAR BEAM EPITAXY (MBE).

Electrically active deep-level defects in Si MBE films are studied. The Si substrates used for the MBE growths are cleaned using several different methods, which result in different degrees of contamination on the Si substrate surfaces. The correlations between the degrees of contamination and the observed deep level defects are presented. The spatial distributions of the observed defects are obtained using a defect profiling technique. A deep level defect with E//c-E//t approximately equals 0. 58 eV is consistently obtained. The nature and origin of this defect is discussed.