Characterization of fluorine-modified organosilicate glass

Chi Wen Liu, Ying Lang Wang, Yungder Juang, Shiuh Ko Jangjean, Wen His Lee

研究成果: Article同行評審

摘要

In this study, fluorine-modified organosilicate glass (F-OSG) films were deposited by using a plasma-enhanced chemical vapor deposition technique on 3MS O2 Si F4 mixtures to change deposition temperatures. The films were characterized by using reflectometer data, Fourier transformation infrared spectroscopy, and x-ray photoelectron spectroscopy. The authors found that film deposition rates and fluorine contents in the F-OSG films decreased while the deposition temperature increased; moreover, negative apparent activation energies for film deposition were also observed, suggesting a deposition process dominated by surface adsorption/desorption reactions. In addition, the authors also investigated the effects of Si-C and Si-F bonding on the dielectric breakdown and leakage mechanism of the F-OSG films. They found that high and two-step breakdown voltage of the F-OSG films relative to that of the OSG films can be highlighted as a consequence of the structural change accompanied by the incorporation of fluorine, and hence the leakage current behavior of F-OSG in low field conduction is well explained by the Schottky emission.

原文English
文章編號015606JVA
頁(從 - 到)2076-2081
頁數6
期刊Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
24
發行號6
DOIs
出版狀態Published - 2006

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜

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