Characterization of gan schottky barrier photodiodes with a low-temperature GaN Cap layer

Keyphrases

• Low Temperature 100%
• GaN Cap Layer 100%
• UV Photodiode 100%
• Schottky Barrier Photodiode 100%
• Ni-Au 100%
• GaN Layers 50%
• Reverse Bias 50%
• Responsivity 50%
• Nitrides 50%
• Dark Current 50%
• Photocurrent 50%
• Leakage Current 50%
• Contrast Ratio 50%
• Metal Organic Vapor Phase Epitaxy (MOVPE) 50%
• Schottky Barrier 50%
• Incident Light 50%
• Light Wavelength 50%
• Operation Speed 50%
• RC Time Constant 50%

Engineering

• Low-Temperature 100%
• Photodiode 100%
• Schottky Barrier 100%
• Cap Layer 100%
• Nitride 33%
• Speed Operation 33%
• Reverse Bias 33%
• Responsivity 33%
• Photocurrent 33%
• Contrast Ratio 33%
• Constant Time 33%
• Resistive 33%
• Light Incident 33%
• Reduce Leakage 33%

Material Science

• Schottky Barrier 100%
• Nitride Compound 50%
• Vapor Phase Epitaxy 50%