Characterization of Hf 1-xZr xO 2 gate dielectrics with 0 ≤ x ≤ 1 prepared by atomic layer deposition for metal oxide semiconductor field effect transistor applications

Chen Kuo Chiang, Chien Hung Wu, Chin Chien Liu, Jin Fu Lin, Chien Lun Yang, Jiun Yuan Wu, Shui Jinn Wang

研究成果: Article

10 引文 斯高帕斯(Scopus)

摘要

In this work, we investigated the influence of incorporating zirconia (ZrO 2) in HfO 2 gate dielectric on the electrical properties and reliability of n-channel metal oxide semiconductor field effect transistors (nMOSFETs). Detailed film physical, chemical and optical properties of Hf 1-xZr xO 2 as a function of Zr content were studied using high resolution transmission electron microscopy (HR-TEM), angle resolved X-ray photoelectron spectroscopy (AR-XPS), and spectroscopic ellipsometer (SE). Compared to HfO 2, Hf 1-xZr xO 2 provides not only higher k values for further equivalent oxide thickness (EOT) scaling but also lower capacitance-voltage (C-V) hysteresis, lower threshold voltage (V t) shift (δ V t), and higher time-to-failure (TTF) lifetimes. Improved TTF lifetime of as high as three orders of magnitude and 35% lower Vt shift were achieved from the Hf 1-xZr xO 2 gate stack with x = 0:8. The improved reliability of the Hf 1-xZr xO 2 gate dielectric is attributed to the reduced charge trapping in the Hf 1-xZr xO 2 gate dielectric caused by the ZrO 2 incorporation.

原文English
文章編號011101
期刊Japanese journal of applied physics
51
發行號1
DOIs
出版狀態Published - 2012 一月 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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