Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories

Y. Y. Chen, T. H. Li, K. T. Kin, C. H. Chien, J. C. Lou

研究成果: Conference contribution

2 引文 (Scopus)

摘要

In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al 2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories.

原文English
主出版物標題NanoSingapore 2006
主出版物子標題IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
頁面463-466
頁數4
DOIs
出版狀態Published - 2006 十一月 14
事件2006 IEEE Conference on Emerging Technologies - Nanoelectronics - Singapore, Singapore
持續時間: 2006 一月 102006 一月 13

出版系列

名字NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
2006

Other

Other2006 IEEE Conference on Emerging Technologies - Nanoelectronics
國家Singapore
城市Singapore
期間06-01-1006-01-13

指紋

Flash memory
Metallorganic chemical vapor deposition
Leakage currents
Reactive sputtering
Electric breakdown
Permittivity
Current density

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Chen, Y. Y., Li, T. H., Kin, K. T., Chien, C. H., & Lou, J. C. (2006). Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories. 於 NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings (頁 463-466). [1609772] (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings; 卷 2006). https://doi.org/10.1109/NANOEL.2006.1609772
Chen, Y. Y. ; Li, T. H. ; Kin, K. T. ; Chien, C. H. ; Lou, J. C. / Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories. NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. 2006. 頁 463-466 (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings).
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abstract = "In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al 2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories.",
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Chen, YY, Li, TH, Kin, KT, Chien, CH & Lou, JC 2006, Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories. 於 NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings., 1609772, NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings, 卷 2006, 頁 463-466, 2006 IEEE Conference on Emerging Technologies - Nanoelectronics, Singapore, Singapore, 06-01-10. https://doi.org/10.1109/NANOEL.2006.1609772

Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories. / Chen, Y. Y.; Li, T. H.; Kin, K. T.; Chien, C. H.; Lou, J. C.

NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. 2006. p. 463-466 1609772 (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings; 卷 2006).

研究成果: Conference contribution

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N2 - In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al 2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories.

AB - In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al 2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories.

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Chen YY, Li TH, Kin KT, Chien CH, Lou JC. Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories. 於 NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. 2006. p. 463-466. 1609772. (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings). https://doi.org/10.1109/NANOEL.2006.1609772