@inproceedings{93084dec342549d48917707d1b8423e6,
title = "Characterization of Oxide Layers on AlGaN Based DUV LEDs by TEM/STEM Analysis",
abstract = "Optoelectrical properties of AlGaN-based DUV LEDs were improved by forming gallium oxide and aluminum-gallium oxide layers around sidewalls of GaN and AlGaN epitaxial layers by thermal annealing at temperature high than 850°C. Microstructure of oxide layers were investigated by TEM. Three oxide phases are observed on GaN and AlGaN epitaxial layers. They are all identified to be crystalline phases, one dense and two porous, by SADPs and TEM/STEM images. Combined with data of STEM/EDS analysis, these oxides are designated to be Ga2O3(I), Ga2O3(II), AlxGa2-xO3(I) and AlxGa2-xO3(II) respectively. The gallium oxide is suspected to be β-Ga2O3 by comparing experimental SADPs with simulated SADPs.",
author = "Bow, {Jong Shing} and Jay Wang and Lai, {Wei Chih} and Wang, {Tien Yu} and Sie, {Syuan Yu} and Chang, {Sheng Po} and Kuo, {Cheng Huang} and Sheu, {Jinn Kong}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022 ; Conference date: 18-07-2022 Through 21-07-2022",
year = "2022",
doi = "10.1109/IPFA55383.2022.9915764",
language = "English",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022",
address = "United States",
}