Characterization of oxide tarps in 28nm p-type metal-oxide-semiconductor field-effect transistors with tip-shaped SiGe source/drain based on random telegraph noise

Bo Chin Wang, San Lein Wu, Chien Wei Huang, Yu Ying Lu, Shoou Jinn Chang, Yu Min Lin, Kun Hsien Lee, Osbert Cheng

研究成果: Article

13 引文 (Scopus)

摘要

In this study, the impact of embedded tip-shaped SiGe in the source/drain (S/D) region on individual trap behavior such as activation energy and depth from the SiO 2/Si interface of the 28nm p-type metal-oxide- semiconductor field-effect transistors (pMOSFETs) has been investigated on the basis of drain current random telegraph noise (RTN). The purpose of implementing tip-shaped SiGe S/D is to further increase channel stress because it provides a closer proximity of embedded SiGe to the channel. By characterizing RTN, we found that the pMOSFETs underwent uniaxial compressive strain that was provided by tip-shaped SiGe S/D, and the trap energy level being close to the channel valence band resulted in the trap located close to the Si/SiO 2 interface, as compared with the control device without embedded SiGe S/D.

原文English
文章編號02BC11
期刊Japanese journal of applied physics
51
發行號2 PART 2
DOIs
出版狀態Published - 2012 二月 1

指紋

Telegraph
p-type semiconductors
MOSFET devices
metal oxide semiconductors
field effect transistors
traps
Oxides
oxides
Drain current
Valence bands
Electron energy levels
control equipment
Activation energy
proximity
energy levels
activation energy
valence

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

引用此文

Wang, Bo Chin ; Wu, San Lein ; Huang, Chien Wei ; Lu, Yu Ying ; Chang, Shoou Jinn ; Lin, Yu Min ; Lee, Kun Hsien ; Cheng, Osbert. / Characterization of oxide tarps in 28nm p-type metal-oxide-semiconductor field-effect transistors with tip-shaped SiGe source/drain based on random telegraph noise. 於: Japanese journal of applied physics. 2012 ; 卷 51, 編號 2 PART 2.
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abstract = "In this study, the impact of embedded tip-shaped SiGe in the source/drain (S/D) region on individual trap behavior such as activation energy and depth from the SiO 2/Si interface of the 28nm p-type metal-oxide- semiconductor field-effect transistors (pMOSFETs) has been investigated on the basis of drain current random telegraph noise (RTN). The purpose of implementing tip-shaped SiGe S/D is to further increase channel stress because it provides a closer proximity of embedded SiGe to the channel. By characterizing RTN, we found that the pMOSFETs underwent uniaxial compressive strain that was provided by tip-shaped SiGe S/D, and the trap energy level being close to the channel valence band resulted in the trap located close to the Si/SiO 2 interface, as compared with the control device without embedded SiGe S/D.",
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Characterization of oxide tarps in 28nm p-type metal-oxide-semiconductor field-effect transistors with tip-shaped SiGe source/drain based on random telegraph noise. / Wang, Bo Chin; Wu, San Lein; Huang, Chien Wei; Lu, Yu Ying; Chang, Shoou Jinn; Lin, Yu Min; Lee, Kun Hsien; Cheng, Osbert.

於: Japanese journal of applied physics, 卷 51, 編號 2 PART 2, 02BC11, 01.02.2012.

研究成果: Article

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AU - Huang, Chien Wei

AU - Lu, Yu Ying

AU - Chang, Shoou Jinn

AU - Lin, Yu Min

AU - Lee, Kun Hsien

AU - Cheng, Osbert

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