Characterization of oxide traps in 28nm n-type metal-oxide-semiconductor field-effect transistors with different uniaxial tensile stresses utilizing random telegraph noise

Bo Chin Wang, San Lein Wu, Yu Ying Lu, Chien Wei Huang, Chung Yi Wu, Yu Min Lin, Kun Hsien Lee, Osbert Cheng, Po Chin Huang, Shoou Jinn Chang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this study, the effect of uniaxial tensile on the SiO2/Si interface of the 28nm n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs) has been investigated. nMOSFETs were fabricated with different thicknesses of the stress-memorization technique (SMT) films to further increase channel stress because the SMT films can provide a higher uniaxial tensile to the channel. Trap behaviors such as activation energy and depth were characterized on the basis of drain current random telegraph noise (RTN). By RTN analyses, we found that the trap energy level is closer to the channel conduction band as the tensile strain in the channel increases higher, resulting in the trap being located close to the SiO2/Si interface.

原文English
文章編號04CC24
期刊Japanese journal of applied physics
52
發行號4 PART 2
DOIs
出版狀態Published - 2013 四月

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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