Characterization of sputtered tantalum carbide barrier layer for copper metallization

Material Science

• Scanning Electron Microscopy 100%
• X-Ray Diffraction 100%
• Carbide 100%
• Tantalum 100%
• Film 50%
• X-Ray Photoelectron Spectroscopy 50%
• Annealing 50%
• Silicon 50%
• Silicide 50%
• Thermal Stability 50%
• Electron Microscopy 50%
• Amorphous Material 50%
• Secondary Ion Mass Spectrometry 50%

Engineering

• Ray Diffraction 100%
• Metallizations 100%
• Barrier Layer 100%
• Deposited Film 50%
• Diffusion Barrier 50%
• Annealing Temperature 50%
• Ray Photoelectron Spectroscopy 50%
• Current Measurement 50%
• Sheet Resistance 50%

Keyphrases

• Tantalum Carbide 100%
• Scanning Electron Microscopy Analysis 50%
• Copper Silicide 50%
• Failure Temperature 50%