Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy

J. S. Hwang, W. Y. Chou, G. S. Chang, S. L. Tyan, M. Hong, J. P. Mannaerts, J. Kwo

研究成果: Conference contribution

摘要

We have used room temperature photoreflectance spectroscopy to study interfacial electronic properties of various oxide-GaAs heterostructures. The samples, air-, Al2O-, Ga2Ox-, and Ga2O3(Gd2O3)-GaAs, were fabricated by in-situ molecular beam epitaxy. Built-in electric fields are 48, 44, and 35 kV/cm for air-, Al2O3-, and Ga2Ox-GaAs samples, respectively, corresponding to the interfacial state density (Dit) of 2.4, 2.2, and 1.9×1011 cm-2 eV-1, respectively. For the Ga3O3(Gd2O3)-GaAs sample, the built-in electric field is negligibly small, indicating a very low interfacial stare density. Estimated by the low field limit criterion, Dit is less than 1×1011 cm-2 eV-1. Our results are consistent with the previous data obtained using capacitance-voltage measurements in quasi-static/high frequency modes.

原文English
主出版物標題Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
編輯Mike Melloch, Mark A. Reed
發行者Institute of Electrical and Electronics Engineers Inc.
頁面249-253
頁數5
ISBN(列印)0780338839, 9780780338838
DOIs
出版狀態Published - 1997
事件24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States
持續時間: 1997 九月 81997 九月 11

出版系列

名字Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Other

Other24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
國家/地區United States
城市San Diego
期間97-09-0897-09-11

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

指紋

深入研究「Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy」主題。共同形成了獨特的指紋。

引用此