Characterization of ZnO metal-semiconductor-metal ultraviolet photodiodes with palladium contact electrodes

S. J. Young, L. W. Ji, R. W. Chuang, S. J. Chang, X. L. Du

研究成果: Article同行評審

26 引文 斯高帕斯(Scopus)

摘要

ZnO metal-semiconductor-metal (MSM) photodiodes with palladium (Pd) contact electrodes were fabricated. It was found that the barrier height at the Pd/ZnO interface was 0.701 eV. With an incident wavelength of 370 nm and 1 V applied bias, it was found that the maximum responsivity of the Pd/ZnO/Pd MSM photodiodes was 0.051 A/W, which corresponds to a quantum efficiency of 11.4%. For a given bandwidth of 100 Hz and 1 V applied bias, we found that the noise equivalent power and the corresponding detectivity D* were 1.13 × 10-12 W and 6.25 × 1011 cmHz0.5 W -1, respectively.

原文English
文章編號026
頁(從 - 到)1507-1511
頁數5
期刊Semiconductor Science and Technology
21
發行號10
DOIs
出版狀態Published - 2006 十月 10

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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