Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors

Shiou Jen Jian; Sheng Yuan Chu

doi:10.1080/10584580590897272

Characterization of ZnO thin film depositing on the 64° LiNbO ₃ substrate and its applications on liquid sensors

Shiou Jen Jian
, Sheng Yuan Chu

電機工程學系

研究成果: Conference article › 同行評審

摘要

Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO₃ substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO₃) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.

原文	English
頁（從 - 到）	55-63
頁數	9
期刊	Integrated Ferroelectrics
卷	69
DOIs	https://doi.org/10.1080/10584580590897272
出版狀態	Published - 2005
事件	16th International Symposium on Integrated Ferroelectrics, ISIF-16 - Gyeongju, Korea, Republic of 持續時間: 2004 4月 5 → 2004 4月 8

All Science Journal Classification (ASJC) codes

電子、光磁材料
控制與系統工程
陶瓷和複合材料
凝聚態物理學
電氣與電子工程
材料化學

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title = "Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors",

abstract = "Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.",

author = "Jian, \{Shiou Jen\} and Chu, \{Sheng Yuan\}",

year = "2005",

doi = "10.1080/10584580590897272",

language = "English",

volume = "69",

pages = "55--63",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

note = "16th International Symposium on Integrated Ferroelectrics, ISIF-16 ; Conference date: 05-04-2004 Through 08-04-2004",

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TY - JOUR

T1 - Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors

AU - Jian, Shiou Jen

AU - Chu, Sheng Yuan

PY - 2005

Y1 - 2005

N2 - Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.

AB - Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.

UR - https://www.scopus.com/pages/publications/33644758208

UR - https://www.scopus.com/pages/publications/33644758208#tab=citedBy

U2 - 10.1080/10584580590897272

DO - 10.1080/10584580590897272

M3 - Conference article

AN - SCOPUS:33644758208

SN - 1058-4587

VL - 69

SP - 55

EP - 63

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

T2 - 16th International Symposium on Integrated Ferroelectrics, ISIF-16

Y2 - 5 April 2004 through 8 April 2004

ER -

Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors

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Characterization of ZnO thin film depositing on the 64° LiNbO ₃ substrate and its applications on liquid sensors