Charge Pump Based Gate Driver Integrated Circuit for SiC MOSFET

Mao Hong Jiang, Chan Liang Wu, Chung Hsun Huang

研究成果: Conference contribution

摘要

Silicon Carbide (SiC) MOSFET has become the mainstream power device for applications having a high voltage, high temperature operating circumstance such as electric vehicle. To exploit the advantages of SiC MOSFET, a welldesigned gate driver is mandatory, whose design challenges have trade-offs among switching speed, noise generation and reliability. Generally, a gate driver is composed of discrete components with occupying a large footprint, while possibly inducing parasitic side-effects and lowering power density. Thus, we demonstrate a gate driver integrated circuit with integrating a self-timing charge pump circuit on chip. Physical design considerations were also raised in this paper to eliminate the occurrence of Latch-up, IR drop, Electromigration, and ESD problems. A charge pump gate driver (CPGD) integrated circuit (IC) is designed, implemented and fabricated using TSMC 0. 1S μ m70V Technology, in which demonstrates a very small die footprint of 3 mm2 while achieving a significant improvement in switching transient speed over a conventional gate driver design.

原文English
主出版物標題WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350337112
DOIs
出版狀態Published - 2023
事件2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, Taiwan
持續時間: 2023 8月 272023 8月 29

出版系列

名字WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
國家/地區Taiwan
城市Hsinchu
期間23-08-2723-08-29

All Science Journal Classification (ASJC) codes

  • 能源工程與電力技術
  • 電氣與電子工程
  • 電子、光磁材料

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