Charge-transfer doped intrinsic diamond electrochemical electrodes

Waileong Chen, Chiuan Yi Li, Shoupu Yeh, Shin Hung Yei, Yonhua Tzeng

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

We report electrochemical characteristics of hydrogen terminated charge-transfer doped intrinsic microcrystalline diamond films. Microcrystalline diamond was synthesized by Direct-Current Plasma Enhanced Chemical Vapor Deposition (DC-PECVD) in methane diluted by hydrogen. The diamond films were subjected to further treatment by microwave plasma in pure hydrogen to increase the hydrogen termination of the diamond surfaces and their negative electron affinity. When the diamond is exposed to the ambient moisture, valance electrons tend to tunnel from the first few atomic layers of the diamond surface to the adsorbed water adlayer. This charge transfer process results in the surface of hydrogen-terminated diamond behaving like a p-type semiconductor. Electrochemical characteristics of hydrogen-terminated diamond films were exposed to an air plasma for depleting the surface hydrogen atoms and then re-hydrogenated the same diamond films with atomic hydrogen. Cyclic voltammetry in 0.1M H 2SO 4 aqueous solution and 0.01M Fe(CN) 6 -4/-3+0.1M KCl aqueous solution was applied to reveal high current density and wide potential window for hydrogen-terminated diamond grown on silicon substrates. The faceted surface morphology has been observed by SEM. The crystalline characteristics and carbon phases in the diamond film were examined by Raman spectroscopy.

原文English
主出版物標題Carbon Functional Interfaces
頁面81-86
頁數6
DOIs
出版狀態Published - 2011
事件2011 MRS Spring Meeting - San Francisco, CA, United States
持續時間: 2011 四月 252011 四月 29

出版系列

名字Materials Research Society Symposium Proceedings
1362
ISSN(列印)0272-9172

Other

Other2011 MRS Spring Meeting
國家United States
城市San Francisco, CA
期間11-04-2511-04-29

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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